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MMFT2955EONN/a13000avaiTMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
MMFT2955ET1GONN/a35200avaiPower MOSFET 1 Amp, 60 Volts


MMFT2955ET1G ,Power MOSFET 1 Amp, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMFT3055EL ,MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATA by MMFT3055EL/D ** ** * ** **N–Channel Enhancemen ..
MMFT3055V ,TMOS POWER FET 1.7 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT3055VL ,Power MOSFET 1 Amp, 60 Volts3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
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MMFT5P03HDT1 ,Power MOSFET 5 Amps, 30 Voltsenergy in the avalanche and commutation modes and thedrain–to–source diode has a very low reverse r ..
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MMFT2955E-MMFT2955ET1G
Power MOSFET 1 Amp, 60 Volts
MMFT2955E
Preferred Device

Power MOSFET1 Amp, 60 Volts
P–Channel SOT–223

This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This new energy efficient device
also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium power
surface mount applications. Silicon Gate for Fast Switching Speeds The SOT–223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
Power rating when mounted on FR–4 glass epoxy printed circuit board using
recommended footprint.
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