MMFT1N10E ,MEDIUM POWER TMOS FET 1 AMP 100 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMFT1N10E/D ** ** * ** *N–Channel Enhancement M ..
MMFT2406T1 ,MEDIUM POWER TMOS FET 700 mA 240 VOLTSMaximum ratings applied to the device are individual stress limit values (not1 2 3normal operating ..
MMFT2406T1G ,Power MOSFET 700 mA, 240 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
MMFT2406T3 ,Power MOSFETMaximum ratings applied to the device are individual stress limit values (not1 2 3normal operating ..
MMFT2955E ,TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS3R , DRAIN-TO-SOURCE RESISTANCE (OHMS)I , DRAIN CURRENT (AMPS) I , DRAIN CURRENT (AMPS)DS(on)D DR , ..
MMFT2955ET1G ,Power MOSFET 1 Amp, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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MP8775AQ , CMOS 20 MSPS, 8-Bit, High Speed Analog-to-Digital Converter
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MMFT1N10E
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
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N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface MountThis advanced E–FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dc–dc converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications. Silicon Gate for Fast Switching Speeds Low RDS(on) — 0.25 Ω max The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
DEVICE MARKING
THERMAL CHARACTERISTICS(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
