MMDL301T1 ,Silicon Hot-Carrier Diodes2I , REVERSE LEAKAGE ( A) C , TOTAL CAPACITANCE (pF)R T, MINORITY CARRIER LIFETIME (ps)I , FOR ..
MMDL301T1G , Silicon Hot-Carrier Diodes
MMDL6050 ,Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max Unit5A ..
MMDL6050T1 ,Switching Diode2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENT (μA)RMMDL6050T1PACKAGE DIM ..
MMDL770T1 ,Schottky Barrier DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDL914 ,High-Speed Switching DiodeTHERMAL CHARACTERISTICS2Characteristic Symbol Max UnitTotal Device Dissipation FR-5 Board P 200 mWD ..
MP7682KN , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7682KN , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7682KS , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7684AJS , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER
MP7684AJS , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER
MP7684AKN , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER
MMDL301T1
Silicon Hot-Carrier Diodes
MMDL301T1
Preferred DeviceSilicon Hot-Carrier Diodes
Schottky Barrier DiodeThese devices are designed primarily for high–efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package. Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage – IR = 13 nAdc (Typ) Device Marking: 4T
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
THERMAL CHARACTERISTICS*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
