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MMDJ3P03BJTR2ONN/a1180avaiDual PNP Bipolar Power Transistor, SO-8


MMDJ3P03BJTR2 ,Dual PNP Bipolar Power Transistor, SO-83V, VOLTAGE (V) H , DC CURRENT GAIN V , COLLECTOR-EMITTER VOLTAGE (V)FE CE(sat)V, VOLTAGE (V) H , D ..
MMDL301T1 ,Silicon Hot-Carrier Diodes2I , REVERSE LEAKAGE (  A) C , TOTAL CAPACITANCE (pF)R T, MINORITY CARRIER LIFETIME (ps)I , FOR ..
MMDL301T1G , Silicon Hot-Carrier Diodes
MMDL6050 ,Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max Unit5A ..
MMDL6050T1 ,Switching Diode2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENT (μA)RMMDL6050T1PACKAGE DIM ..
MMDL770T1 ,Schottky Barrier DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MP7682KN , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7682KN , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7682KS , CMOS, 6-Bit High-Speed Analog-to-digital Converter
MP7684AJS , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER
MP7684AJS , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER
MP7684AKN , CMOS 8 BIT HIGH SPEED ANALOG TO DIGITAL CONVERTER


MMDJ3P03BJTR2
Dual PNP Bipolar Power Transistor, SO-8
Plastic Power T ransistors
SO–8 for Surface Mount Applications
Collector –Emitter Sustaining V oltage —
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain —
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc Low Collector –Emitter Saturation Voltage —
VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc Miniature SO–8 Surface Mount Package – Saves Board Space
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