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MMDF7N02ZMOTOROLAN/a453avaiDUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02ZMOTN/a5499avaiDUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS


MMDF7N02Z ,DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMDF7N02Z ,DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/D* **Medium Power Surface Mount Produ ..
MMDFS2P102R2 ,MOSFET ahd schottky rectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) JCharacteristic Symbol Min Typ Max Uni ..
MMDFS3P303-D ,Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKYELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 1. & 6.)JCharacteristics Symbol ..
MMDFS3P303R2 ,Power MOSFET 3 Amps / 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)J DIAGRAM(Notes 1. & 2.)Rating Symbol Value UnitSO ..
MMDFS3P303R2 ,Power MOSFET 3 Amps / 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 1. & 6.)JCharacteristics Symbol ..
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MMDF7N02Z
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
-Medium Power Surface Mount Products ! -
EZFETs are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. Zener Protected Gates Provide Electrostatic Discharge Protection Designed to Withstand 200 V Machine Model and 2000 V Human Body Model Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
THERMAL RESISTANCE

(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING ORDERING INFORMATION

This document contains information on a new product. Specifications and information herein are subject to change without notice.
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SEMICONDUCTOR TECHNICAL DATA

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