MMDF3N04HDR2 ,Power MOSFET 3 Amps, 40 Volts N-Channel SO-8 DualMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
MMDF3N06VL ,Power MOSFET 3 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF4N01HD ,OBSOLETE
MMDF4P03HD ,DUAL TMOS POWER MOSFET 30 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF6N02HD ,DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF6N03HDR2 ,Power MOSFET 6 Amps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JMARKINGRating Symbol Value UnitDIAGRAMDrain–to–So ..
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7633JS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7633KS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7651AS , 8-Channel, Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Data Port and Chip Select Decoder
MP7670AN , 8-CHANNEL, VOLTAGE OUTPUT, 5 MHZ, 4 QUADRANT MULTIPLYING 8BIT D/A CONVERTER WITH SERIAL DIGITAL DATA PORT
MMDF3N04HD-MMDF3N04HDR2
Power MOSFET 3 Amps, 40 Volts N-Channel SO-8 Dual
MMDF3N04HD
Preferred DevicePower MOSFET 3 Amps, 40 Volts
N−Channel SO−8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain−to−source diode
has a very low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc− dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk drives
and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO−8 Package Provided Avalanche Energy Specified
N−Channel
