MMDF2P02E ,DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF2P02ER2 ,Power MOSFET 2 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.) 8JLYWWSTYLE 11Rating Symbol Value Unit1 ..
MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 VoltsApplications EngineerAPPLICATION NOTEINTRODUCTIONA new technology, HDTMOS, was recently introduced ..
MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MMDF2P02HDR2G , Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P03HD ,Power MOSFET 2 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1.)CCharacteristic Symbol Min Ty ..
MP7616KN , 15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7633JS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7633KS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7651AS , 8-Channel, Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Data Port and Chip Select Decoder
MMDF2P02E
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS
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Medium Power Surface Mount Products - --
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, with Soft Recovery IDSS Specified at Elevated Temperatures Avalanche Energy Specified Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
DEVICE MARKING(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
