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MMDF2C02HDR2MOTOROLAN/a1379avaiPower MOSFET 2 Amps, 20 Volts


MMDF2C02HDR2 ,Power MOSFET 2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)JD2C02CASE 7518LYWWRating Symbol Value U ..
MMDF2C03HD ,COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTSELECTRICAL CHARACTERISTICS − continued (T = 25°C unless otherwise noted) (Note 6)ACharacteristic Sy ..
MMDF2C03HDR2 ,Dual Complementary 30VELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)ACharacteristic Symbol Polarit ..
MMDF2C03HDR2 ,Dual Complementary 30VMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)JRating Symbol Value UnitD2C03 = Device C ..
MMDF2C03HDR2 ,Dual Complementary 30Vhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reve ..
MMDF2N02E ,DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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MMDF2C02HDR2
Power MOSFET 2 Amps, 20 Volts
MMDF2C02HD
Preferred Device

Power MOSFET
2 Amps, 20 Volts
Complementary SO–8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the drain–
to–source diode has a very low reverse recovery time. MiniMOS� de-
vices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc–dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where induc-
tive loads are switched and offer additional safety margin against un-
expected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life Logic Level Gate Drive – Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package – Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery Avalanche Energy Specified Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Negative signs for P–Channel device omitted for clarity.
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