| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMC0103 |
N/A |
N/a |
14 |
 |
|
MMC2147HJ-3 ,5 V, 4096 x 1-bit static RAMElectrical Characteristics TA = ty'C to +70°c, VCC = 5V _+ 10% (Notes1 and 2)
NM02147H-1
Symbol P ..
MMDF1N05E ,DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF1N05ER2 ,Power MOSFET 1 Amp, 50 Voltshigh energy in the avalanche and commutation modes and thedrain–to–source diode has a low reverse r ..
MMDF1N05ER2 ,Power MOSFET 1 Amp, 50 Volts3R , DRAIN-TO-SOURCE ON-RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R , DRAIN-TO-SOURCE RESISTANCE (O ..
MMDF2C02ER2 ,Power MOSFET 2.5 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)J18Rating Symbol Value UnitSO−8F2C02Drain ..
MP6752 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching
MP6754 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enh ..
MP6757 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching
