| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMBZ5256BST |
ST|ST Microelectronics |
N/a |
2990 |
 |
|
MMBZ5257B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 33.0 V. Test current 3.8 mA.
MMBZ5257B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 33.0 V. Test current 3.8 mA.
MMBZ5257BLT1 ,SEMICONDUCTORElectrical Characteristics table on page 3 ofare exceeded, device functional operation is not impli ..
MMBZ5257BS-7-F , 200mW SURFACE MOUNT ZENER DIODE
MMBZ5258BL ,Small Signal Zener 36V 5%MMBZ5221BLT1 SeriesPreferred Device Zener Voltage Regulators225 mW SOT−23 Surface MountThis series ..
MP6301 ,Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse MotorElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..
MP6403 ,HIGH POWER SWITCHING APPLICATION 3 PHASE MOTOR AND BIPOLAR DRIVE OF PULSE MOTORM P6403TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (LZ-zr-MOSIV 6 IN 1)MP6403HIGH P ..
MP6404 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
