| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMBZ5254BLT1G(27V/23) |
ON|ON Semiconductor |
N/a |
6000 |
 |
|
MMBZ5255B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 28.0 V. Test current 4.5 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MMBZ5255BLT1 ,Zener voltage regulator diodeELECTRICAL CHARACTERISTICS (T = 25°C unlessAIotherwise noted, V = 0.95 V Max. @ I = 10 mA)F FIFSymb ..
MMBZ5256B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MMBZ5256B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MMBZ5256B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MP6301 ,Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse MotorElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..
MP6403 ,HIGH POWER SWITCHING APPLICATION 3 PHASE MOTOR AND BIPOLAR DRIVE OF PULSE MOTORM P6403TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (LZ-zr-MOSIV 6 IN 1)MP6403HIGH P ..
MP6404 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
