| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMBZ5236B-NL |
FAIRCHILD|Fairchild Semiconductor |
N/a |
2950 |
 |
|
MMBZ5236BS-7-F , 200mW SURFACE MOUNT ZENER DIODE
MMBZ5237 ,Zener DiodeElectrical Characteristics (T = 25°C unless otherwise noted) Maximum V = 0.9 V at I = 10 mAA F FMax ..
MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
