Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MMBZ5232B-V-GS08 |
VISHAY|Vishay |
N/a |
3000 |
|
|
MMBZ5233B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MMBZ5233B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA.
MMBZ5233B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5233BLT1 ,SEMICONDUCTORMMBZ5221BLT1 SeriesPreferred Device Zener Voltage Regulators225 mW SOT−23 Surface MountThis series ..
MMBZ5234B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MP3H6115A6T1 , High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
MP3V5004DP , Integrated Silicon Pressure Sensor, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MP4005 ,40A, 50V ultra fast recovery rectifierElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..