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Home ›  MM150 > MMBZ5226B-MMBZ5228B-MMBZ5229B-MMBZ5230B-MMBZ5232B-MMBZ5233B-MMBZ5234B-MMBZ5236B-MMBZ5237B-MMBZ5239B-MMBZ5240B-MMBZ5242B-MMBZ5245B-MMBZ5248B-MMBZ5250B-MMBZ5252B-MMBZ5254B-MMBZ5255B-MMBZ5256B,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.
MMBZ5226B-MMBZ5228B-MMBZ5229B-MMBZ5230B-MMBZ5232B Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
MMBZ5226BMOTON/a170192avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.3 V. Test current 20.0 mA.
MMBZ5228BNATIONALN/a6000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.9 V. Test current 20.0 mA.
MMBZ5229BN/a12000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
MMBZ5230BMOTON/a5860avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.7 V. Test current 20.0 mA.
MMBZ5232BDIODESN/a1628avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
MMBZ5233BMOTON/a5692avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA.
MMBZ5234BNSN/a3050avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
MMBZ5234BONN/a1315avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
MMBZ5236BONN/a2547avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
MMBZ5237BONN/a735avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.
MMBZ5237BMOTON/a15075avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.
MMBZ5237BN/a219000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.
MMBZ5239BVISHAYN/a3000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 9.1 V. Test current 20.0 mA.
MMBZ5240BPANJITN/a3000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA.
MMBZ5242BPHILIPSN/a95000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 12.0 V. Test current 20.0 mA.
MMBZ5245BMOTON/a35223avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 15.0 V. Test current 8.5 mA.
MMBZ5248BN/a3000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 18.0 V. Test current 7.0 mA.
MMBZ5250BMOTON/a6277avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 20.0 V. Test current 6.2 mA.
MMBZ5252BMOTON/a1210avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 24.0 V. Test current 5.2 mA.
MMBZ5254BMOTON/a23323avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 27.0 V. Test current 4.6 mA.
MMBZ5255BNSN/a2200avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 28.0 V. Test current 4.5 mA.
MMBZ5256BNATIONALN/a3000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.
MMBZ5256BONN/a18000avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.
MMBZ5256BMOTON/a425avaiSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.


MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5237B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MMBZ5237B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5237BLT1 ,SEMICONDUCTORTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitCASE 318-07, STYLE 8SOT-23 (TO-236AB)Total Dev ..
MMBZ5238 ,Zener Diode01-May-02 1max. .004 (0.1) .056 (1.43).007 (0.175) .052 (1.33).005 (0.125).045 (1.15).037 (0.95) MM ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
MP4203 ,TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPEAPPLICATIONSUnit in mmHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOADSWITCHING l l25.2 -+0.24V G ..
MP4207 ,N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, HELECTRICAL CHARACTERISTICS (Ta=25°C) (Nch MOS FET)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeak ..
MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
MP4209 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverApplications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver  ..


MMBZ5226B-MMBZ5228B-MMBZ5229B-MMBZ5230B-MMBZ5232B-MMBZ5233B-MMBZ5234B-MMBZ5236B-MMBZ5237B-MMBZ5239B-MMBZ5240B-MMBZ5242B-MMBZ5245B-MMBZ5248B-MMBZ5250B-MMBZ5252B-MMBZ5254B-MMBZ5255B-MMBZ5256B
Zeners
Discrete POWER & Signal
Technologies
N
Tolerance: B = 5%
Electrical Characteristics TA = 25°C unless otherwise noted
CONNECTION
DIAGRAM
2 NC
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter Value Units

Storage Temperature Range -55 to +150 °C
Maximum Junction Operating Temperature + 150 °C
Total Device Dissipation
Derate above 25°C
mW/°C
*These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed

or low duty cycle operations.
Device Mark VZ
(V)
Ω)
IZT
(mA)
ZZK
Ω)
IZK
(mA)
(V)
μA)
MMBZ 5226B

MMBZ 5227B
MMBZ 5228B
MMBZ 5229B

1,600
1,700
1,900
1,000
MMBZ 5230B
MMBZ 5231B
MMBZ 5232B
MMBZ 5233B
1,900
1,600
1,600
1,600
MMBZ 5234B
MMBZ 5235B
MMBZ 5236B
MMBZ 5237B
1,000
MMBZ 5238B
MMBZ 5239B
MMBZ 5240B

MMBZ 5241B
MMBZ 5242B

VF Foward Voltage = 0.9 V Maximum @ IF = 10 mA for all MMBZ 5200 series@ @
NOTE: National preferred devices in BOLD
MMBZ5226B - MMBZ5257B Series Zeners
SOT-23
MMBZ5226B - MMBZ5257B Series
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