MMBTA92_NL ,PNP High Voltage Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
MMBTA92L ,Small Signal High VoltageFeatures• Pb−Free Package May be Available. The G−Suffix Denotes a
MMBTA92LT1 ,High Voltage Transistor(PNP Silicon)THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit MARKING3DIAGRAMTotal Device Dissipation FR−5 ..
MMBTA92LT3 ,Small Signal High VoltageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBTA92LT3 ,Small Signal High VoltageMAXIMUM RATINGS3Rating Symbol MMBTA92 UnitCollector−Emitter Voltage V −300 Vdc 1CEOBASECollector−Ba ..
MMBTA93 , EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE TELEPHONE)
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MP2104 , 1.7MHz, 600mA Synchronous Step-Down Converter
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MP2-202S , Ultra-Fast-Recovery Rectifier Diode
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MMBTA92_NL
PNP High Voltage Amplifier
MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 300 V CEO V Collector-Base Voltage 300 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSA92 *MMBTA92 **PZTA92 P Total Device Dissipation 625 350 1,000 mW D Derate above 25°C 5.0 2.8 8.0 mW/°C R Thermal Resistance, Junction to Case 83.3 C/W θJC ° R Thermal Resistance, Junction to Ambient 200 357 125 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2 **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
