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MMBT3906WT1 ON N/a3000avaiGeneral Purpose Transistor
MMBT3906WT1MOTON/a16967avaiGeneral Purpose Transistor


MMBT3906WT1 ,General Purpose Transistor**Order this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/D * * **NPN and PNP Silicon**These tra ..
MMBT3906WT1 ,General Purpose TransistorThese transistors are designed for general purpose amplifierapplications. They are housed in the SO ..
MMBT3906WT1 ,General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBT3906WT1G ,Transistor MINIBLOCELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
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MMBT3906WT1
General Purpose Transistor
--NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
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