MMBF170 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesYEfficient high density cell design approachingTheseN-channelenhancementmodefieldeffecttran ..
MMBF170LT1 ,TMOS FET TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MMBF170LT1G ,Power MOSFET 500 mAmps, 60 VoltsMAXIMUM RATINGSR = 5 Rating Symbol Value UnitDS(on)Drain−Source Voltage V 60 VdcDSSN−ChannelDrain− ..
MMBF170LT1G ,Power MOSFET 500 mAmps, 60 VoltsTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit2Total Device Dissipation FR−5 Board PD(Note 1 ..
MMBF170LT1G ,Power MOSFET 500 mAmps, 60 VoltsELECTRICAL CHARACTERISTICS2.0 1.01.8 V = 10 VT = 25°CDSA25°C-55°C1.6 V = 10 V 0.8GS125°C1.4 9 V1.2 ..
MMBF2201NT1 ,Power MOSFET 300 mAmps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain–to–Source Voltage V ..
MOC3030 , OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC
MOC3033M ,6-Pin DIP 250V Zero Crossing Triac Driver Output OptocouplerFEATURESSCHEMATIC• Simplifies logic control of 115 VAC power1• Zero voltage crossing• dv/dt of 2000 ..
MOC3041 ,6-Pin DIP Zero-Cross Optoisolators Triac Driver OutputMAXIMUM RATINGS (T = 25°C unless otherwise noted)2A 5Rating Symbol Value UnitZERO3 CROSSING4INFRARE ..
MOC3041M ,6-Pin DIP 400V Zero Crossing Triac Driver Output OptocouplerAPPLICATIONS N/C 3 CROSSING 4 MAIN TERM.CIRCUIT• Solenoid/valve controls • Lighting controls• Stati ..
MOC3041M ,6-Pin DIP 400V Zero Crossing Triac Driver Output OptocouplerAPPLICATIONS N/C 3 CROSSING 4 MAIN TERM.CIRCUIT• Solenoid/valve controls • Lighting controls• Stati ..
MOC3041-M ,6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)APPLICATIONS N/C 3 CROSSING 4 MAIN TERM.CIRCUIT• Solenoid/valve controls • Lighting controls• Stati ..
MMBF170
Enhancement-Mode MOSFET Transistors
TL/G/11379
BS170/MMBF170
N-Channel
Enhancement
Mode
Field
Effect
Transistor
August 1992
BS170/MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
TheseN-channel enhancement mode field effect transistors
are produced using National’s very highcell density third
generation DMOS technology. These products have been
designedto minimize on-state resistance, provide rugged
and reliable performanceand fast switching. They canbe
used, witha minimumof effort,in most applications requir-
ingupto 500mADC. This productis particularly suitedto
low voltage,low current applications, suchas small servo
motor controls, power MOSFET gate drivers, and other
switching applications
Features Efficient high densitycell design approaching million/in2) Voltage controlled small signal switch Rugged High saturation current Low RDS(on)
TL/G/11379–1
TO-92
BS170
TL/G/11379–2
TO-236AB
(SOT-23)
MMBF170
TL/G/11379–3
Absolute Maximum Ratings
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGSs 1MX)60 V
VGSS Gate-Source Voltage g20 V Drain CurrentÐContinuous 500 500 mA
ÐPulsed 800 mA Total Power Dissipation 830 300 mW
Derate above 25§C 6.6 2.4 mW/§C
TJ,TSTG Operatingand StorageTemperature Range b55to150 §C Maximum LeadTemperaturefor Soldering 300 §CPurposes, (/16× from Casefor 10Seconds
C1995National SemiconductorCorporation RRD-B30M115/PrintedinU.S.A.
