MMBD301LT1 ,Silicon Hot-Carrier DiodeON SemiconductorMBD301Silicon Hot-Carrier DiodesMMBD301LT1SCHOTTKY Barrier DiodesON Semiconductor ..
MMBD330T1 ,Switching Diode MINIBLOCMAXIMUM RATINGSRating Symbol Value UnitReverse Voltage MMBD110T1 V 7.0 VdcRMMBD330T1 30MMBD770T1 70 ..
MMBD352LT1 ,Dual Hot Carrier Mixer DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)ACharacteristic Symbol Min ..
MMBD352LT1G , Dual Hot Carrier Mixer Diodes
MMBD353LT1 ,Dual Hot Carrier Mixer DiodesON SemiconductorMMBD352LT1Dual Hot Carrier Mixer DiodesMMBD353LT1MMBD354LT1These devices are desig ..
MMBD353LT1 ,Dual Hot Carrier Mixer DiodesMAXIMUM RATINGS (EACH DIODE)MMBD352LT1CASE 318–08, STYLE 11Rating Symbol Value UnitSOT–23 (TO–236AB ..
MOC207M ,8-Pin SOIC Phototransistor Output OptocouplerFEATURES•U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option "V" fo ..
MOC207R1M ,8-Pin SOIC Phototransistor Output OptocouplerFEATURES•U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option "V" fo ..
MOC207R2M ,8-Pin SOIC Phototransistor Output OptocouplerFEATURES•U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option "V" fo ..
MOC207R2M ,8-Pin SOIC Phototransistor Output Optocouplerapplications, and eliminate the need for through - the - board mounting.
MOC207R2M ,8-Pin SOIC Phototransistor Output OptocouplerFEATURES•U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option "V" fo ..
MOC207R2-M ,8-Pin SOIC Phototransistor Output Optocoupler SMALL OUTLINE OPTOCOUPLERSTRANSISTOR OUTPUTMOC205-M MOC206-M MOC207-M MOC208-MDESCRI ..
MMBD301LT1
Silicon Hot-Carrier Diode
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier DiodesThese devices are designed primarily for high–efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package. Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
CASE 182–06, STYLE 1
(TO–226AC)
MBD301
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
MMBD301LT1CATHODE
ANODE
CATHODE
ANODE
