MLD1N06CL ,VOLTAGE CLAMPED CURRENT LIMITING MOSFET2MLD1N06CL4T = 25°CJV ≥ 7.5 VDS4-50°C310 V8 V36 V4 V25°C22T = 150°CV = 3 V1 GS J10002 4 6 80 24 68V ..
MLD2N06CL ,VOLTAGE CLAMPED CURRENT LIMITING MOSFET2I , DRAIN CURRENT (AMPS)DI , DRAIN CURRENT (AMPS)DMLD2N06CLTHE SMARTDISCRETES CONCEPT SHORT CIRCUI ..
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MMBZ5233B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA.
MMBZ5233B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5233BLT1 ,SEMICONDUCTORMMBZ5221BLT1 SeriesPreferred Device Zener Voltage Regulators225 mW SOT−23 Surface MountThis series ..
MMBZ5234B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5234B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MMBZ5234B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
MLD1N06CL
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level
MLD1N06CL
Preferred DeviceSMARTDISCRETES� MOSFET1 Amp, 62 Volts, Logic Level
N−Channel DPAKThe MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and Sensefet technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kΩ gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV . The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS When surface mounted to an FR−4 board using the minimum
recommended pad size.
