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MJE5740 from ON, ON Semiconductor 3000pcs , TO-220,POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
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MJE5740 ON N/a 3000
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max UnitÎÎÎ OFF CHARACTERISTICS (2)ÎÎÎÎÎCollector–Emitter Sustaining Voltage MJE5740 V 300 – – VdcCEO(sus)Î(I = 50 mA, I = 0) MJE5742 400 – –C BÎÎÎÎÎÎCollector Cutoff Current (V = Rated Value, V = 1.5 Vdc) I – – 1 mAdcCEV BE(off) CEVÎÎÎ(V = Rated Value, V = 1.5 Vdc, T = 100C) – – 5CEV BE(off) CÎÎÎ Emitter Cutoff Current (V = 8 Vdc, I = 0)ÎÎÎ IÎ –ÎÎÎÎÎÎ –Î 75ÎÎÎÎÎÎ mAdcEB C EBOSECOND BREAKDOWNÎSecond Breakdown Collector Current with Base Forward Biased I See Figure 6S/bÎÎÎÎÎClamped Inductive SOA with Base Reverse Biased RBSOA See Figure 7Characteristic Symbol Min Typ Max UnitÎON CHARACTERISTICS (3)ÎDC Current Gain (I = 0.5 Adc, V = 5 Vdc) h 50 100 – –C CE FEÎÎÎÎ (I = 4 Adc, V = 5 Vdc)ÎÎÎÎÎÎ200 400 –C CEÎÎÎ Collector–Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc)ÎÎÎ VÎ –ÎÎÎÎÎÎ –Î 2ÎÎÎÎÎÎ VdcC B CE(sat)Collector–Emitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc)– – 3C BÎÎÎCollector–Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T =– – 2.2C B C100C)ÎÎÎBase–Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc) V – – 2.5 VdcC B BE(sat)ÎÎÎÎÎÎBase–Emitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc) – – 3.5C BBase–Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T = 100C)– – 2.4ÎÎÎÎ C B CÎÎÎÎÎÎDiode Forward Voltage (4) (I = 5 Adc) V – – 2.5 VdcF fÎÎÎÎÎÎSWITCHING CHARACTERISTICSÎÎÎÎÎÎTypical Resistive Load (Table 1)ÎÎDelay Time t – 0.04 – μsdÎ(V = 250 Vdc, I = 6 ACC C(pk) ()Rise Time t – 0.5 – μsrII = I =I = 0.25 A, t =025A t = 25 =25 μ μs s,B1 B1 B2 B2 pÎÎ Storage TimeÎÎÎÎÎÎ tÎ –ÎÎÎÎÎÎ 8Î –ÎÎÎÎÎÎ μssDuty Duty Cycle Cycle  1 1%) %)Fall Time t – 2 – μsÎ fInductive Load, Clamped (Table 1)ÎÎÎÎÎÎVoltage Storage Time t – 4 – μssv(I (I = 6 A = 6 A, , V V = 250 Vdc = 250 VdcC( C(p pk) k) CE( CE(p pk) k)ÎI = 0.06 A, V = 5 Vdc)Crossover Time t – 2 – μsB1 BE(off)cÎÎÎÎ(2) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%. (continued)(3) Pulse Test: Pulse Width 300 μs, Duty Cycle = 2%.(4) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown thatthe Forward Recovery Voltage (V ) of this diode is comparable to that of typical fast recovery rectifiers.f

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