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Partno	Mfg	Dc	Qty	Available	Descript
MJE200	ON	N/a	30158	avai	40 V, 5 A, NPN epitaxial silicon transistor
MJE210		N/a	535	avai	Leaded Power Transistor General Purpose

MJE200 ,40 V, 5 A, NPN epitaxial silicon transistorELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CÎÎÎÎÎCharacteristic Symbol Min Max Uni ..
MJE200G , Complementary Silicon Power Plastic Transistors
MJE200STU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MJE200STU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MJE200TSTU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MJE210 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case θ 8.34
C ..
MM74HC240SJ ,Inverting Octal 3-STATE BufferFeaturesThe MM74HC240 3-STATE buffer utilizes advanced sili-

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MJE200-MJE210
Power 5A 25V PNP
Complementary Silicon Power
Plastic Transistors.. designed for low voltage, low–power, high–gain audio amplifier
applications. Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain —
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc High Current–Gain — Bandwidth Product —
fT = 65 MHz (Min) @ IC
= 100 mAdc Annular Construction for Low Leakage —
ICBO = 100 nAdc @ Rated VCB
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