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MJE18004D2MOTN/a660avaiPOWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
MJE18004D2ONN/a388avaiPOWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS


MJE18004D2 ,POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSMAXIMUM RATINGSRating Symbol Value UnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE18004G , NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18006 ,POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS3, VOLTAGE (VOLTS) , VOLTAGE (VOLTS) h , DC CURRENT GAINV VBE CE FEC, CAPACITANCE (pF) , VOLTAGE (V ..
MJE18006 ,POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTSELECTRICAL CHARACTERISTICS — continued (T = 25C unless otherwise specified)CÎCharacteristic Symbol ..
MJE18008 ,POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTSELECTRICAL CHARACTERISTICS (T = 25ÎÎÎÎ * C unless otherwise specified)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE180STU ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
MM74HC194N ,4-Bit Bidirectional Universal Shift RegisterMM54HC194/MM74HC1944-BitBidirectionalUniversalShiftRegisterNovember1995MM54HC194/MM74HC1944-BitBidi ..
MM74HC221AM ,Dual Non-Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-

MJE18004D2
POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
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The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features: Low Base Drive Requirement High Peak DC Current Gain (55 Typical) @ IC = 100 mA Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCE(sat) “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
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