| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MJD4H11T4 |
ON|ON Semiconductor |
N/a |
1924 |
 |
|
MJD50 ,NPN Epitaxial Silicon Transistorhttp://onsemi.com2MJD47, MJD50TYPICAL CHARACTERISTICST TA CVCC2.5 25 TURN-ON PULSERCAPPROX+11 VSCOP ..
MJD50 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RatingÎÎÎÎÎÎÎÎÎÎÎÎ Symbo ..
MM74HC14N ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fSymbol Parameter Cond ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A VSymbol Parameter ..
