MJD45H11 ,PNP Epitaxial Silicon TransistorMJD45H11MJD45H11General Purpose Power and Switching Such as Output or Driver Stages in
MJD45H11-001 ,Power 10A 80V PLA PNP3MJD44H11 (NPN) MJD45H11 (PNP)10.7D = 0.50.50.30.20.2P(pk)R = r(t) RJC(t) JC0.1R = 6.25°C/W MAXJ ..
MJD45H11G ,SILICON POWER TRANSISTORS3MJD44H11 (NPN) MJD45H11 (PNP)10.7D = 0.50.50.30.20.2P(pk)R = r(t) RJC(t) JC0.1R = 6.25°C/W MAXJ ..
MJD45H11RL ,Power 10A 80V PLA PNPFeatures8 AMPERES• Pb−Free Packages are Available80 VOLTS• Lead Formed for Surface Mount Applicatio ..
MJD45H11RLG , Complementary Power Transistors
MJD45H11T4 ,SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS2MJD44H11 (NPN) MJD45H11 (PNP)ORDERING INFORMATION†Device Package Type Package ShippingMJD44H11 DPA ..
MM74HC148M ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148MX ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148N ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC14M ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MM74HC14MTC ,Hex Inverting Schmitt TriggerFeaturesThe MM74HC14 utilizes advanced silicon-gate CMOS
MJD45H11
PNP Epitaxial Silicon Transistor
MJD45H11 MJD45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE45H 1.Base 2.Collector 3.Emitter • Fast Switching Speeds • Low Collector Emitter Saturation Voltage PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage - 80 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I Collector Current (Pulse) - 16 A CP P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 80 V CEO C B I Collector Cut-off Current V = - 80V, I = 0 - 10 μA CEO CE B I Emitter Cut-off Current V = - 5V, I = 0 - 50 μA EBO BE C h *DC Current Gain V = - 1V, I = - 2A 60 FE CE C V = - 1V, I = - 4A 40 CE C V (sat) *Collector-Emitter Saturation Voltage I = - 8A, I = - 0.4A - 1 V CE C B V (on) *Base-Emitter Saturation Voltage I = - 8A, I = - 0.8A - 1.5 V BE C B f Current Gain Bandwidth Product V = - 10A, I = - 0.5A 40 MHz T CE C C Collector Capacitance V = - 10V, f = 1MHz 230 pF ob CB t Turn ON Time I = - 5A 135 ns ON C I = - I = - 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 100 ns F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
