MJD44H11TM ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
MJD45H11 ,PNP Epitaxial Silicon TransistorMJD45H11MJD45H11General Purpose Power and Switching Such as Output or Driver Stages in
MJD45H11-001 ,Power 10A 80V PLA PNP3MJD44H11 (NPN) MJD45H11 (PNP)10.7D = 0.50.50.30.20.2P(pk)R = r(t) RJC(t) JC0.1R = 6.25°C/W MAXJ ..
MJD45H11G ,SILICON POWER TRANSISTORS3MJD44H11 (NPN) MJD45H11 (PNP)10.7D = 0.50.50.30.20.2P(pk)R = r(t) RJC(t) JC0.1R = 6.25°C/W MAXJ ..
MJD45H11RL ,Power 10A 80V PLA PNPFeatures8 AMPERES• Pb−Free Packages are Available80 VOLTS• Lead Formed for Surface Mount Applicatio ..
MJD45H11RLG , Complementary Power Transistors
MM74HC148M ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148M ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148M ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148MX ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC148N ,8-3 Line Priority EncoderMM74HC148 8-3 Line Priority EncoderOctober 1987Revised September 2001MM74HC1488-3 Line Priority Enc ..
MM74HC14M ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MJD44H11TM
NPN Epitaxial Silicon Transistor
MJD44H11 MJD44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H 1.Base 2.Collector 3.Emitter • Fast Switching Speeds • Low Collector Emitter Saturation Voltage NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I Collector-Current (Pulse) 16 A CP P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = 30mA, I = 0 80 V CEO C B I Collector Cut-off Current V = 80V, I = 0 10 μA CEO CE B I Emitter Cut-off Current V = 5V, I = 0 50 μA EBO BE C h *DC Current Gain V = 1V, I = 2A 60 FE CE C V = 1V, I = 4A 40 CE C V (sat) *Collector-Emitter Saturation Voltage I = 8A, I = 0.4A 1 V CE C B V (on) *Base-Emitter ON Voltage I = 8A, I = 0.8A 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 50 MHz T CE C C Output Capacitance V =10V, f = 1MHz 130 pF ob CB t Turn ON Time I = 5A 300 ns ON C I = - I = 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 140 ns F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
