MJD41CTF ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
MJD42 ,General Purpose AmplifierApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD42C ,PNP Epitaxial Silicon Transistorhttp://onsemi.com3h , DC CURRENT GAIN P , POWER DISSIPATION (WATTS)V, VOLTAGE (VOLTS) FE Dt, TIME ( ..
MJD42C1 ,Power 6A 100V PNPMaximum ratings applied to the device are individual stress limit values (not and best overall valu ..
MJD42C1 ,SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD42CT4 ,Power 6A 100V PNPFeatures6 AMPERES• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)100 VOL ..
MM74HC138MX ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138N ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138SJ ,3 to 8 Line DecoderGeneral DescriptionTTL equivalent loads, and are functionally and pin equiva-The MM74HC138 decoder ..
MM74HC138SJX ,3 to 8 Line Decoderfeatureshigh noise immunity and low power consumption usually
MM74HC139M ,Dual 2-to-4 Line DecoderFeaturesThe MM74HC139 decoder utilizes advanced silicon-gate
MJD41CTF
NPN Epitaxial Silicon Transistor
MJD41C MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 6 A C I Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 30mA, I = 0 100 V CEO C B I Collector Cut-off Current V = 60V, I = 0 50 μA CEO CE B I Collector Cut-off Current V = 100V, V = 0 10 uA CES CE BE I Emitter Cut-off Current V = 5V, I = 0 0.5 mA EBO BE C h * DC Current Gain V = 4V, I = 0.3A 30 FE CE C V = 4V, I = 3A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = 6A, I = 600mA 1.5 V CE C B V (on) * Base-Emitter ON Voltage V = 6A, I = 4A 2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
