MJD350TF ,PNP Epitaxial Silicon TransistorMJD350MJD350High Voltage Power Transistors D-PAK for Surface Mount
MJD350TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
MJD41C ,SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction−to−Case R 6.25 °C ..
MJD41CRL ,Power 6A 100V NPNhttp://onsemi.com2MJD41C (NPN) MJD42C (PNP)TYPICAL CHARACTERISTICST T VA C CC+30 V2.5 25RC2 2025 ..
MJD41CT4 ,Power 6A 100V NPNMAXIMUM RATINGSRating Symbol Max Unit4Collector−Emitter Voltage V 100 VdcCEODPAK−3YWWCollector−Base ..
MJD41CT4G , Complementary Power Transistors
MM74HC132SJ ,Quad 2-Input NAND Schmitt TriggerFeaturesThe MM74HC132 utilizes advanced silicon-gate CMOS
MJD350TF
PNP Epitaxial Silicon Transistor
MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 300 V CBO V Collector-Emitter Voltage - 300 V CEO V Emitter-Base Voltage - 3 V EBO I Collector Current (DC) - 0.5 A C I Collector Current (Pulse) - 0.75 A CP P Collector Dissipation (T = 25°C) 15 W C C Collector Dissipation (T = 25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 1mA, I = 0 -300 V CEO C B I Collector Cut-off Current V = -300V, I =0 -0.1 mA CEO CB E I Emitter Cut-off Current V = -3V, I = 0 -0.1 mA EBO EB C h * DC Current Gain V = -10V, I = -50mA 30 240 FE CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
