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MJD31CRL 800pcs , TO-220,Power 3A 100V Discrete NPN
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MJD31CRL N/a 800
MJD31CRL from ON, ON Semiconductor 3855pcs , TO252,Power 3A 100V Discrete NPN
3h , DC CURRENT GAIN P , POWER DISSIPATION (WATTS)V, VOLTAGE (VOLTS) FE Dt, TIME (s) μ t, TIME (s) μMJD31, MJD31C (NPN), MJD32, MJD32C (PNP)3002T = +25°CT = 25°CJJ2001.6I = 0.3 A1 A 3 AC1.2100Ceb0.870500.4Ccb3000.1 0.2 0.3 0.5 1 2 3 5 10 20 30 401 2 5 10 20 50 100 200 500 1000V , REVERSE VOLTAGE (VOLTS)I , BASE CURRENT (mA)B RFigure 7. Collector Saturation Region Figure 8. Capacitance10.7D = 0.50.50.30.20.2 P(pk)R = r(t) R0.1 JC(t) JCR = 8.33°C/W MAXJC0.050.1D CURVES APPLY FOR POWER0.07PULSE TRAIN SHOWN0.01 t10.05READ TIME AT t1 t2T - T = P J(pk) C (pk) JC(t)0.03DUTY CYCLE, D = t /tSINGLE PULSE 1 20.020.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 kt, TIME (ms)Figure 9. Thermal Response10There are two limitations on the power handling ability of5 a transistor: average junction temperature and second100s3breakdown. Safe operating area curves indicate I − V500s C CE21mslimits of the transistor that must be observed for reliable1dcoperation; i.e., the transistor must not be subjected to greater0.5 dissipation than the curves indicate.WIRE BOND LIMITTHERMAL LIMIT0.3 The data of Figure 10 is based on T = 150C; T isJ(pk) C0.2SECOND BREAKDOWN LIMITvariable depending on conditions. Second breakdown pulseCURVES APPLY BELOW RATED VCEO0.1limits are valid for duty cycles to 10% provided TJ(pk)T = 25°C SINGLE PULSEC0.05  150C. T may be calculated from the data inJ(pk)T = 150°CJMJD31, MJD320.03Figure 9. At high case temperatures, thermal limitations will0.02MJD31C, MJD32Creduce the power that can be handled to values less than the0.01limitations imposed by second breakdown.1.5 2 3 5 7 10 20 30 50 70 100 150V , COLLECTOR-EMITTER VOLTAGE (VOLTS)CEFigure 10. Active Region Safe Operating AreaMaximum ratings applied to the device are individual stress limit values (notand best overall value.normal operating conditions) and are not valid simultaneously. If these limitsare exceeded, device functional operation is not implied, damage may occurand reliability may be affected.
MJD31CT4 STMicroelectronics,MJD31B/31CMJD32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN ..
MJD31CT4 STM,MJD31B/31CMJD32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN ..
MJD31CT4 ST,MJD31B/31CMJD32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN ..

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