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MJD243T4GONN/a10000avaiComplementary Silicon Plastic Power Transistor


MJD243T4G ,Complementary Silicon Plastic Power TransistorFeaturesPOWER TRANSISTOR• Collector−Emitter Sustaining Voltage − V = 100 Vdc (Min) @ I4CEO(sus) C= ..
MJD253 ,Plastic Power TransistorMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
MJD253T4 ,Plastic Power TransistorMAXIMUM RATINGSRating Symbol Value UnitÎCollector−Base Voltage V 100 VdcCBÎÎCollector−Emitter Volta ..
MJD253T4 ,Plastic Power TransistorFeaturesPOWER TRANSISTOR• Collector−Emitter Sustaining Voltage − V = 100 Vdc (Min) @ I4CEO(sus) C= ..
MJD2955 ,COMPLEMENTARY SILICON POWER TRANSISTORS3h , DC CURRENT GAINV, VOLTAGE (VOLTS)FEP , POWER DISSIPATION (WATTS)Dt, TIME (s) μ t, TIME (s) ..
MJD2955 ,COMPLEMENTARY SILICON POWER TRANSISTORSMAXIMUM RATINGSYWWDPAK−3Rating Symbol Max UnitJCASE 369DCollector−Emitter Voltage V 60 VdcCEO xx55S ..
MM74HC11N ,Triple 3-Input AND GateMM54HC11/MM74HC11Triple3-InputANDGateJanuary1988MM54HC11/MM74HC11Triple3-InputANDGateGeneralDescrip ..
MM74HC123AJ ,Dual Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-
MM74HC123AJ ,Dual Retriggerable Monostable MultivibratorMM54HC123A/MM74HC123ADualRetriggerableMonostableMultivibratorJanuary1988MM54HC123A/MM74HC123ADualRe ..
MM74HC123AM ,Dual Retriggerable Monostable MultivibratorMM74HC123A Dual Retriggerable Monostable MultivibratorSeptember 1983Revised May 2001MM74HC123ADual ..
MM74HC123AMTCX ,Dual Retriggerable Monostable MultivibratorMM74HC123A Dual Retriggerable Monostable MultivibratorSeptember 1983Revised May 2001MM74HC123ADual ..
MM74HC123AMX ,Dual Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-

MJD243T4G
Complementary Silicon Plastic Power Transistor
MJD243 (NPN),
MJD253 (PNP)
Preferred Device

Complementary Silicon
Plastic Power T ransistor
DPAK−3 for Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min) @ IC
= 10 mAdc High DC Current Gain −
hFE = 40 (Min) @ IC
= 200 mAdc
= 15 (Min) @ IC = 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Low Collector−Emitter Saturation V oltage −
VCE(sat) = 0.3 Vdc (Max) @ IC
= 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc High Current−Gain − Bandwidth Product −
fT = 40 MHz (Min) @ IC
= 100 mAdc Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V Pb−Free Package is Available
ic,good price


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