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MJD200-MJD200RL-MJD200T4-MJD210-MJD210RL Fast Delivery,Good Price
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MJD200ONN/a13475avaiComplementary Plastic Power Transistors NPN
MJD200RLMOTN/a871avaiComplementary Plastic Power Transistors NPN
MJD200T4ONN/a2500avaiSILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MJD210N/a3avaiPNP Epitaxial Silicon Transistor
MJD210RLMOTN/a1000avaiPower 5A 25V Discrete PNP
MJD210T4ONN/a30137avaiSILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS


MJD210T4 ,SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTSMAXIMUM RATINGSRating Symbol Max UnitCollector−Base Voltage V 40 VdcCBCollector−Emitter Voltage V 2 ..
MJD210T4G , Complementary Plastic Power Transistors
MJD210TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
MJD210TF ,PNP Epitaxial Silicon TransistorMJD210MJD210D-PAK for Surface Mount
MJD210-TF ,PNP Epitaxial Silicon TransistorApplications• High DC Current Gain• Low Collector Emitter Saturation Voltage• Lead Formed for Surfa ..
MJD210-TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
MM74HC08N ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08SJX , Quad 2-Input AND Gate
MM74HC08SJX , Quad 2-Input AND Gate
MM74HC107N , MM54HC107/MM74HC107 Dual J-K Flip-Flops with Clear
MM74HC11N ,Triple 3-Input AND GateMM54HC11/MM74HC11Triple3-InputANDGateJanuary1988MM54HC11/MM74HC11Triple3-InputANDGateGeneralDescrip ..
MM74HC123AJ ,Dual Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-


MJD200-MJD200RL-MJD200T4-MJD210-MJD210RL-MJD210T4
Complementary Plastic Power Transistors NPN
MJD200 (NPN)
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For SurfaceMount Applications

Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V Pb−Free Packages are Available
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