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Partno	Mfg	Dc	Qty	Available	Descript
MJD127	ON	N/a	365	avai	PNP Silicon Darlington Transistor
MJD127	CJ	N/a	32500	avai	PNP Silicon Darlington Transistor
MJD127	MOT	N/a	20	avai	PNP Silicon Darlington Transistor

MJD127 ,PNP Silicon Darlington Transistor3I μ, COLLECTOR CURRENT ( A) V, VOLTAGE (VOLTS) h , DC CURRENT GAINCFEh , SMALL−SIGNAL CURRENT GAIN ..
MJD127 ,PNP Silicon Darlington Transistor
MJD127 ,PNP Silicon Darlington Transistor
MJD127T4 ,COMPLEMENTARY POWER DARLINGTON TRANSISTORSMJD122-1 / MJD122T4MJD127-1 / MJD127T4COMPLEMENTARY POWERDARLINGTON TRANSISTORSOrdering Marking Pac ..
MJD148 ,NPN Silicon Power Transistor3V , COLLECTOR−EMITTER VOLTAGE (V) h , DC CURRENT GAIN (NORMALIZED)CE FEMJD1482 +2.5*APPLIES FOR I ..
MJD148T4 ,NPN Silicon Power TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎCharacteristic Test Conditions Symbol ..
MM74HC04N ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJ ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJX ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC08 ,Quad 2-Input AND Gate
MM74HC08M ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08MTC ,Quad 2-Input AND GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −40 to 125°CA A A VSymbol Parameter ..

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MJD127
PNP Silicon Darlington Transistor
MJD128T4 (PNP)
Preferred Device
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications. Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
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*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.

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