| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MJB3U0212 |
MHS |
N/a |
24 |
 |
|
MJB41C ,Complementary Silicon Plastic Power Transistors2P , POWER DISSIPATION (WATTS)Dt, TIME μ (s)MJB41C (NPN), MJB42C (PNP)1.00.7D = 0.50.50.3 0.20.2 ..
MJB42C ,Complementary Silicon Plastic Power Transistors3t, TIME μ (s)I , COLLECTOR CURRENT (AMP)Cr(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)C, CAPAC ..
MJB42CT4 ,Complementary Silicon Plastic Power TransistorsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJB44H11 ,Complementary Power TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MJB44H11T4 ,Low voltage NPN power transistor3I , COLLECTOR CURRENT (AMPS)r(t), TRANSIENT THERMALCRESISTANCE (NORMALIZED)P , POWER DISSIPATION ( ..
MM74HC00SJX ,Quad 2-Input NAND GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..
MM74HC00SJX ,Quad 2-Input NAND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC00SJX ,Quad 2-Input NAND GateFeaturesThe MM74HC00 NAND gates utilize advanced silicon-gate
