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MJ4502TIN/a3avaiLeaded Power Transistor General Purpose


MJ4502 ,Leaded Power Transistor General PurposeABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit Collector-emitter Voltage (Its Td.'.' O) n V Vc ..
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MJ4502
Leaded Power Transistor General Purpose
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MJ4502
COMPLEMENTARY HIGH POWER TRANSISTORS
DESCRIPTION
The MJ802 (NPN) and MJ4502 (PNP) are silicon
epitaxial-base complementary power transistors in
Jedec TO-3 metal case, intended for general pur-
pose power amplifier and switching applications.
INTERNAL SCHEMATIC DIAGRAMS
PN E 54.91
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vceo Collector-emitter Voltage (la = O) 90 V
Vcao Collector-base Voltage (ls = O) 100 V
Veeo Emitter-base Voltage (lc = O) 4 V
lc Collector Current 30 A
la Base Current 7.5 A
Ptot Total Power Dissipation at Tcase s 25°C 200 W
Tstg Storage Temperature . - 65 to 200 °C
T, Junction Temperature 200 ''C
December 1988
MJ802-MJ4502
THERMAL DATA
IR”. case Thermal Resistance Junction-case Max 0.875 °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ( unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
_ CoMeor-emrtter Sustaining lc = 200 mA 90 V
- .1f11ire (la =0)
Ics:, Collector Cutoff Current Vcs = 100V 1 mA
“E = C) Tcase =150°C 5 mA
1t.”- cnmter Cutoff Current VEB = 4V 1 mA
tlc. = 0)
Coliector-emitter Sustaining -
Volgagg (REE =1OOQ) lc - 200mA 100 V
m»; l DC, Current (ain ic = 7.5A VCE = 2V 25 100
(re " Coilector-emitter Saturation lc = 7.5A Iss = 0.75A 0.8 V
VolEge
Vrrsa Base-emitter Saturation lc = 7.5A la = 0.75A 1.3 V
Vonage
Vs..-, Base-enmter Voltage lc = 7.5A VCE = 2V 1.3 V
t; Iransmcn Frequency 10 = 1A -
f = 1MHZ VCE - 10V 2 MHz
. Pcseo pause awatuar = 30; ..s duty cycle s 2 %.
Fo, PNF :,pe xartage arc -..'re"1vah.es are negative.
Safe Operating Areas. DC Current Gain (NPN type).
6 .5202" 6-52m.
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