| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MJ-201209-R18 |
|
N/a |
12000 |
 |
|
MJ21193 ,16 ampere complementary silicon power transistors 250 volts 250 watts3h hI , COLLECTOR CURRENT (A) , DC CURRENT GAIN , DC CURRENT GAINC FE FEI , COLLECTOR CURRENT (A) h ..
MJ2841 , Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
MJ2841 , Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
MJ3001 ,80V silicon epitaxial-base darlingtonMAXIMUM RATINGS *Motorola Preferred DeviceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJ4502 ,Leaded Power Transistor General PurposeABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
Collector-emitter Voltage (Its Td.'.' O) n V
Vc ..
MM74C928N ,4-Digit Counters with MultiplexedFeaturesput latch, NPN output sourcing drivers for a 7-segment dis-play, and an internal multiplexi ..
MM74C93N ,4-Bit Binary CounterElectrical Characteristics” providesconditions for actual device operation.(Soldering, 10 seconds) ..
MM74C93N ,4-Bit Binary CounterFeaturesThe MM74C93 binary counter and complementary MOS
