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MIG30J103H
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
TOSHIBA MIGBOJ103H
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT
MllG30J1l03ll4
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
0 Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and
overtemperature protection.
0 The Electrodes are Isolated from Case.
0 High speed type IGBT : VCE (sat)=2-7V (MAX.)
toff=2.0,us (MAX,)
trr=0.25ps (MAX.)
0 Outline : TOSHIBA 2-99E1A (See page 5 for the device outline)
0 Weight : 80g
EQUIVALENT CIRCUIT
10 11 15 14 13 12 9 7 8 6 4 5 3 1 2
c" . . . . - ........... C-O- ._.O_O. ._._O_O. _..!
I I l I I
! GND VCC VFO VIN VIN VIN GND VIN VCC GND VIN VCC GND VIN Vcc !
I - GND I
. VS vo VS vo VS vo GND VS vo GND VS vo GND VS vo .
I - " " I
I .J 4 I
i M-w M-w N h' M h' i
i---------)'------:"----)---. _U._._O.P
1. VINU 2. VDU 3. GNDU
4. VINV 5. VDV 6. GNDV
7. VINW 8. VDW 9. GNDW
10. GNDL 11 VDL 12.VINX
13. VINY 14.V1Nz 15-VFO
961001Eik2.
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer. when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
tt The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
tt The information contained herein is subject to change without notice.
1998-07-01 1/10
TOSHIBA MIGBOJ103H
MAXIMUM RATINGS (Tj = 25°C)
SYMBOL ITEM CONDITION RATING UNIT
VCC Supply Voltage P-N 400 V
VCES Collector-Emitter Voltage - 600 V
Inverter Part iIC Collector Current (DC) Tc=25°C 30 A
PC Collector Power Dissipation Tc=25°C 83 W
Ti J unction Temperature - 150 T
VD Supply Voltage - 20 V
Control Part VIN Input Voltage V1N=VD 20 V
VFO Foul Output Voltage VFO=VD 20 V
IFO Foul Output Current - 7 mA
Tc Operating Temperature - - 20-- + 100 "C
All System Tstg Storage Temperature Range - -40-+125 ''C
V130 Isolation Voltage AC, 1 min 2500 Vrms
- Screw Torque M5 2 Nan
ELECTRICAL CHARACTERISTICS (Tj =25°C)
Inverter Part
SYMBOL ITEM TEST CONDITION MIN iris M AX UNIT
I =3OA - 2.1 2.7
VCE( t) Collector-Emitter Saturation VD=15V 10 30A V
sa Volta e I =0mA C-- , - - 3.0
g IN Ti = 125°C .
" Forward Voltage IF=3OA - 2.0 2.7 V
ton Vcc=300V 0.5 1.3 2.0
to (on) 10 = 30A - 0.3 1.0
toff Switching Time VD=15V 0.5 1.0 2.0 ps
te (off) 11%: ESAZE‘EA - 0.5 1 5
trr C e - 0.15 0.25
I C 11 t C t ff C t V 600V Tj=25°C - - 1 A
0 ee or u -o urren = m
CES CE Tj = 125°C - - 20
1998-07-01 2/10
TOSHIBA MIGBOJ103H
Note 1 : Switching Time Test Circuit & Timing Chart
a) Low Side Switching ye-ll-ie-ie-er-lf/Alle
VD J-rt-i-
-1sknL:is, V0 4"} i,' i
VD=15V -
VD-- 15V -
Input Pulse -Irlr 2
b) High Side Switching
VD=15V -
Input Pulse -1 H l"
VD = 15V --
Input Waveform
Voltage Waveform VCE i
1C Rating - - "r-ca-a-ai-: Cut
1998-07-01 3/10
TOSHIBA MIGBOJ103H
Control Part (Tj = 25°C)
SYMBOL ITEM TEST CONDITION SPEC UNIT
MIN. TYP. MAX.
Hi h Sid 6 12 18
ID Circuit Current VD=15V 1g .'l e mA
Low Side 11 23 35
VIN (on) Input On Signal Voltage 1.0 1.3 1,6 V
VIN (off) Input Off Signal Voltage 1.5 1.8 2.1
F l O P . 3 7
IFO ou utput Current ( roteetion) VD-- 15V, VFO= 15V 5 m A
Foul Output Current (Normal) - - 1
V =15V 46 55 -
oc Over Current Protection Trip Level D A
VD=15V, Tis 125°C 39 - -
toff(OC) Over Current Cut Off Time VD=15V 5 10 18 gs
O T t Tri Level 100 110 120
OT ver fampera ure p Case Temperature "C
Protection Reset Level 80 90 100
UV Control Supply Under- Trip Level 11.3 12.0 12.7 V
UVr Voltage Protection Reset Level 11.8 12.5 13.2
tFO Foul Output Pulse Width VD=15V 5 10 15 ms
Thermal Resistance (T] = 25°C)
SYMBOL ITEM TEST CONDITION SPEC UNIT
MIN. TYP. MAX.
Rth (i-e) Junction to Case Thermal INV. IGBT - - 1.5
Rth (j-e) Resistance INV. FWD - - 4.5 DC /W
Case to Fin Thermal Resistance
R - - - 0.2 -
th (e f) with compound
1998-07-01 4/10
TOSHIBA MIGBOJ103H
ELECTRICAL CHARACTERISTICS TEST CIRCUIT (VCE (sat), VF, ICES, ID, VIN, IFO, tFO)
a) VCE (sat) P (U, V, W)
15135 VD _l
15V -- "l':"-"'?:;'-' VIN vo I 1C
GND U, V, W(N)
_F P (U, V, W)
‘15}??? VD _l
15V - T_o_ VIN VO ( IC
-icy- GND -
U, V, W(N)
e) CES P(U, V, ma
o- VD A
"s15kn _I __V
15V -- 1iiil' VIN vo . Iff,
-o- GND - v
U, V, W(N)
“13 -(D-o- VD
15V --
-i:3- GND
e) VIN(OFF) P(U, V, W)
v1N_(ON) .15k0 D v _|
15V -- iJ-"-- VIN o l 10
o- GND -
3kn U, V, W(N)
)io l T (ii) l v, V, W
15kn VD FO
15V -- VIN V0 l 10
g) IFo Ci?, i)
o- VD F0
t15kfl
- flNTrk ______
V7 UL‘U -
1998-07-01 5/10
TOSHIBA MIGBOJ103H
OUTLINE : TOSHIBA 2-99E1A Unit in mm
081:0]
011 2131415
3_§G+0.3
1. VINU 2. VDU 3. GNDU
4. VINV 5. VDV 6. GNDV
7. VINW 8. VDW 9. GNDW
IO, GNDL 11 VDL 12.V1NX
13. VINY 14.VINZ 15.VFO
1998-07-01 6/10
TOSHIBA MIGBOJ103H
TIMING CHART (High side)
Typical example of drive circuit Intelligent Power Modul e
phobocoupler .........................................................
1F=16mA.i'"''''"'''r=i VD
*1) VAU 0+
3 JL Driver
TLP559 (IGM) 'i,...................................................:'
*1) or VAV, VAW
*2) or VINV, VINW
*3) or ng, VGW
*4) or V, W
VD - UV
Te OT 710“
25°C ' -
VGU 7V -------- G-fl--------; F
0''''_p, t2 F- t3 -ol
OC - -
IC Fl H
UV : Under-Voltage Trip Level t1 : 2.5ps (Typ.)
UVr : Under-Voltage Reset Level t2 .' 10ps (Typ.)
OT : Over Temperature Trip Level t3 : 10ms (Typ.)
OTr : Over Temperature Reset Level
OC : Over Current
1998-07-01 7/10
TOSHIBA MIGBOJ103H
TIMING CHART (Low side)
Typical example of drive circuit Intelligent Power Module
?..l1.etf..cfy.?.l.e..r. VD
IF=16mAI .......................
*1) VAX oi-
Driver
*1) or VAy, VAZ
*2) or VlNy, VINZ
*3) or VGy, VGZ
*4) or V, W
VD - UV
0 - _,
Tc OTr
VGX 7V - -Fl--fl-------i, r
tg F- t3 -|
I oc --"l :\|
C 0 Fl fl I-I f-l I-
UV : Under-Voltage Trip Level t1 : 2.5ps (Typ.)
UVr : Under-Voltage Reset Level t2 ,' 10ps (Typ,)
OT : Over Temperature Trip Level t3 : 10ms (Typ.)
OTr : Over Temperature Reset Level
OC : Over Current
1998-07-01 8/10
TOSHIBA
MIGBOJ103H
10 (A)
COLLECTOR CURRENT
1F (A)
FORWARD CURREN"
SWITCHING TIME (/15)
IC - VCE
COMMON EMITrrER
Tc=25°C JY
1ID=17V J/
_,,,p/
0.5 1 1.5 2 2.5 3 3.5
C0LLECT0R-EMITTER VOLTAGE VCE (V)
IF - VF
COMMON
CATHODE .
V =0V '
GE , /
Tc=100°C f
I Tc=25°C
0.5 1 1.5 2 2.5 3 3.5
FORWARD VOLTAGE " (V)
SWITCHING TIME - IC
COMMON EMITTER
Vcc=300V
VD-- 15V
L-Load
Tc= 100°C
10 100
COLLECTOR CURRENT 10 (A)
Ic - VCE
COMMON EMI'ITER
V Tc=100°C V
- 25 f
E VD=17V/¢
m "15V
ttt 20
ttt ~13V
'si.:': r
0 0.5 1 1.5 2 2.5 3 3.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME - IC
COMMON EMITTER
Vcc=300V
VD=15V
G; L-Load
3 Tc=25°C
. 1 10 100
COLLECTOR CURRENT IC (A)
3 trr, Irr - IF
"Clit' COMMON CATHODE
RSE RECOVERY CURRENT I"
REVERSE RECOVERY TIME L"
PEAK REV]
drldt=300A/ps
VD=15V
Tc=25°C
10 100
FORWARD CURRENT IF (A)
1998-07-01 9/10
TOSHIBA
(XIOOA)
PEAK REVERSE RECOVERY CURRENT 1rr
REVERSE RECOVERY TIME tn- (/15)
IC (A)
COLLECTOR CURRENT
OVERCURRENT 00 (A)
trr, Irr - IF
COMMON CATHODE
di/dt--300A/ps
VD-- 15V
Tc-- 100°C
1 10 100
FORWARD CURRENT IF (A)
REVERSE BIAS SOA
(LESS THAN oc TRIP LEVEL)
Tis 125°C
VD=15V
o 100 200 300 400 600 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
OVERCURRENT - TEMP
60 VD-- 17V - -
15V --cduc': M.... - _.-
iiie--2r,rtir."i"v'avra:x. T"....
50 "c"''"'.'-':":?':-:.'-'.-.----:::-::,.
o 20 40 60 80 100 120
CASE TEMP Te (°C)
SWITCHING LOSS
(’0 I W)
THERMAL TRA NSIENT RESISTANCE
LINDEEVOM‘AGE TRIP LEVEL UV
UNDER-VOLTAGE RESET LEVEL UVr
MIGBOJ103H
Eon, Eoff - IC
COMMON EMITTER
VCC = 3 00V
VD = 15V
L-Load
Te = 100'C
turn-off Loss
turn-on Loss
10 100
COLLECTOR CURRENT IC (A)
Rth (t) - tw
Tc = 25°C
DIODE STAGE
TRANSISTOR STAGE
10 100 1000 10000 100000
PULSE WIDTH tw (ms)
UNDERVOLTAGE - TEMP
0 20 40 60 80 100 120
CASE TEMP Te (°C)
1998-07-01 10/10
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