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MIG20J805HTOSHIBAN/a57avaiN CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)


MIG20J805H ,N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)APPLICATIONS 4-8.0:0.4 ra.-f.Lt2t-tla4 6-3.tWh4 N,p N NI Pl EU EV mémmmm m;GU GV GW m5.tHc0.2 m|"|" ..
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MIG20J805H
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
TOSHIBA MIG20J805H
TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT
hhlllG20J805Fll
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS ' .4 343.0:04 .4 “4
EU EV EW GYE 9,
P N NI PIGU GV GW GXIG tMi.8+_0.2 ,
. . A HI th th tt " tt ttt T
o Integrates Inverter, Converter Power Circuits , 65:04 ' I TI , I tf , m. A g
in One Package. E a ,
t9 I'“""“"i ’ n. J
0 Output (Inverter Stage) 4' " i A Iii' J-
try, ‘ " . ————————— ta.
23¢ 20A/600V IGBT Ill ill Ill TI w Ill h l 9."
L ' ' ' ' 24010.4 '
0 Input (Converter Stage) R ttate'"'-"""'' Jer -_
: 3515 20A/ 800V Silicon Rectifier = 600103 B.0t0.5 ..'---
o The Electrodes are Isolated from Case. e 80.0t0.5 163:9
4.0102 = 40.8102
f I:II:II l
' 2,0t0.2
JEDEC -
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TOSHIBA 2-81B1A
EQUIVALENT CIRCUIT Weight : 66g
T C " ' '
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961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MIG20J805H
MAXIMUM RATINGS (Ta = 25°C)
STAGE CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES i20 V
D I 2 A
Collector Current C C 0
Inverter lms ICP 40 A
F d C t DC IF 20 A
orwar urren lms IFM 40 A
Collector Power Dissipation
(Tc=25°C) PC 60 W
Repetitive Peak Reverse Voltage VRRM 800 V
Average Output Rectified Current 10 20 A
Converter
Peak One Cycle Surge Forward I 250 A
Current (50Hz, Non-Repetitive) FSM
Junction Temperature Ti 150 °C
Storage Temperature Range Tstg -40--125 T
Module . 2500
Isolation Voltage V1501 (AC 1 minute) V
Screw Torque - 1.5 Nan
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
a. Inverter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=O - - i500 nA
Collector Cut-off Current ICES VCE=600V, VGE=0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (off) Ic=2mA, VCE=5V 5.0 - 8.0 V
Collector-Emitter Saturation
= = - 2.10 2.60
Voltage VCE (sat) IC 20A, VGE 15V V
Input Capacitance Cies VCE= 10V, VGE =0, f = 1MHz - 1850 - pF
Rise Time tr Vcc=300V - 0.10 0.20
Switching Turn-on Time ton IC=20A - 0.25 0.50
. . VGE = i 15V gs
Time Fall Time tf R G=62 n - 0.15 0.30
Turn-off Time toff (Note 1) - 0.50 0.80
Forward Voltage VF IF=20A, VGE=0 - 1.7 2.7 V
. IF=20A, VGE = -10V
Reverse Recovery Time trr di / dt=5 0 A Hus - 0.08 0.15 gs
. Transistor - - 2.08 o
Thermal Resistance Rth (i-e) Diode - - 3.09 C / W
1998-06-10 2/7
TOSHIBA MIG20J805H
b. Converter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Repetitive Peak Reverse
I =800V - - 0 A
Current RRM VRRM 5 '
Peak Forward Voltage VFM IFM=20A - 1.05 1.20 V
Peak One Cycle Surge Forward .
Current IFSM 50Hz sine-half-wave 250 - - A
Thermal Resistance Rth (i-e) - - - 2.80 °C/W
(Note 1) Switching Time Test Circuit & Timing Chart
t I I toff
1998-06-10 3/7
TOSHIBA
MIG20J805H
a. INVERTER STAGE
IC - VCE
13 COMMON
EMITTER
Tc = 25°C
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VGE = 9V
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
To = - 40°C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR—EMI’I‘TER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON EMITTER
16 1 13 Tc=125°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 125°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER f I
VCE=5V
-40//he--12soc
//4 25
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA MlG20J805H
SWITCHING TIME - IC SWITCHING TIME - RG
a: rd 0.3
'i-i, E; 0.1
COMMON EMITTER COMMON EMITTER
Vcc=300V Tc=25°C Vcc=§80V Te=25'C
VGE=i15V ___ Tc=125ac VGE=_15V ___ Tc=125,c
= I =2 A
RG 629 0.01 C 0
3 10 30 100 10 30 100 300 1000
COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Q)
SWITCHING LOSS - IC SWITCHING LOSS - RG
g 'jCi
ti:',', 0.3 a
a ji.',
g 0.1 jej',,
COMMON EMITTER COMMON EMITTER
vveeyfivv Tc=25°C Vcc=300V Tc=25°C
GE=x ---T =125°C VGE=i15V --- = o
0 01 Rg=620 c Ic=20A Te 125 c
. 1 3 10 30 100 . 10 30 100 300 1000
COLLECTOR CURRENT 10 (A) GATE RESISTANCE Itt1 (Q)
1998-06-10 5/7
TOSHIBA MIG20J805H
C - VCE VCE, VGE - QG
COMMON EMITTER
RL = 15n VCE =0V
Tc=25°C
CAPACITANCE C (pF)
COMMON
EMITTER
VGE =0V
f=1MHz
Tc=25°C
GATE—EMITTER VOLTAGE VGE
COLLECTOR—EMITTER VOLTAGE VCE (V)
0 20 40 60 80 100
1 10 100 1000 CHARGE " (nC)
COLLECTOR-EMITTER VOLTAGE VCE (V)
trr, Irr - IF
COMMON CATHODE
Vcc=300V T =25T
VGE= - 10V c o
di/dt--50A/prs - - - Tc=125 C
40 IF - VF
30 / //
10 / /
/ /A,--e, COMMON
CATHODE
VGE = 0V
0 1 2 3 4 5
(X 10ns)
IF (A)
FORWARD CURREN T
0 5 10 15 20
REVERSE RECOVERY TIME t"
PEAK REVERSE RECOVERY CURRENT 1rr
FORWARD VOLTAGE " (A) FORWARD CURRENT IF (A)
REVERSE BIAS SOA
Rth (t) - tw
TRANSIENT THERMAL RESISTANCE
Rthm (”CIW)
COLLECTOR CURRENT [C (A)
Tis 125"C
Tc=25°C VGE = i 15V
0.01 0.1 RG--62n
0.001 0.01 0.1 1 10 0 200 400 600 800
PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE VCE (V)
1998-06-10 6/7
TOSHIBA
b. CONVERTER STAGE
FORWARD CURRENT IF (A)
COMMON CATHODE
0.5 1 1.5
FORWARD VOLTAGE " (A)
MIG20J805H
Rth (t) - tw
Rth (t) ("C / W)
To = 25°C
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10
PULSE WIDTH tw (s)
1998-06-10 7/7

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