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MIG20J103H
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
TOSHIBA MIG201103H
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT
MllG20ril03Fll
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
0 Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and
overtemperature protection.
0 The Electrodes are Isolated from Case.
0 High speed type IGBT : VCE(sat)=2.7V (MAX.)
toff= 2.0ps (MAX.)
trr=0.2ps (MAX.)
0 Outline : TOSHIBA 2-99E1A (See page 5 for the device outline)
0 Weight : 80g
EQUIVALENT CIRCUIT
10 11 15 14 13 12 9 7 8 6 4 5 3 1 2
!_._._ . . . . - -----C-0- ._.O_O. ---0-0. -''",
I l I l
. GND VCC Wo VINz VINY VINX GND VIN VCC GND VIN VCC GND VIN VCC
! W v U
I - GND
. VSZ Voz VSY VOY VSX vox GND VS vo GND VS vo GND Vs vo
_zt7'-
a L L a
- U- - vav'' VA, I
47K _ _ i
M-, M-, i
i---------------:"----)---. _U._._ JU
1. VINU 2. VDU 3. GNDU
4. VINV 5. VDV 6. GNDV
7. VINW 8. VDW 9. GNDW
10. GNDL 11 VDL 12.V1NX
13. VINY 14.VINZ 15.VFO
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-07-01 1/10
TOSHIBA MIG20J103H
MAXIMUM RATINGS (Tj =25°C)
SYMBOL ITEM CONDITION RATING UNIT
VCC Supply Voltage P-N 400 V
VCES Collector-Emitter Voltage - 600 V
Inverter Part :10 Collector Current (DC) Tc=25°C 20 A
PC Collector Power Dissipation Tc=25°C 62 W
Tj Junction Temperature - 150 °C
VD Supply Voltage - 20 V
Control Part VIN Intput Voltage VIN=VD 20 V
VFO Foul Output Voltage VFO=VD 20 V
IFO Foul Output Current - 7 mA
Te Operating Temperature - - 20-- + 100 °C
A11 System Tstg Storage Temperature Range - -40-+125 °C
VISO Isolation Voltage AC, 1 min 2500 Vrms
- Screw Torque M5 2 Nan
ELECTRICAL CHARACTERISTICS (Tj =25°C)
Inverter Part
YMB L TE T DITI
S o ITEM S CON ON MIN. TYP. MAX. UNIT
I = 20A - 2.1 2.7
VCE ( ) Collector-Emitter Saturation VD = 15V 1C 20A V
Volta e I = 0mA C ' - - 3.0
g IN Tj = 125°C
VF Forward Voltage IF = 20A - 1.8 2.5 V
. 1. 2.
ton VCC = 300V 0 5 3 0
k (on) IC=20A - 0.3 1.0
toff Switching Time VD = 15V 0.5 1.0 2.0 #S
to (off) IIN = {mAQOM - 0.4 1 5
trr Inductive Load - 0.12 0.2
I C 11 t C t ffC t V 600V Tj=25oc - - 1 A
o ec or ll -o urren = m
CES CE Ti = 125°C - - 20
1998-07-01 2/10
TOSHIBA MIG20J103H
Note 1 : Switching Time Test Circuit & Timing Chart
a) Low Side Switching 1.p-te-l1-ie1-1P-v-w'-h-'-"ole,
c- VCC
Input Pulse -Irlr l _-___.-.-.-.-.-.-.-.-.-.-. i IC
b) High Side Switching
VD-- 15V -
VD: 15V -
Input Waveform
Voltage Waveform VCE
IC Rating C-r-r-ir-ca-a-u-r-f -..--.-.-. .
Current Waveform IC
TOSHIBA MIG20J103H
Control Part (Tj = 25°C)
SYMBOL ITEM TEST CONDITION SPEC UNIT
MIN. TYP. MAX.
Hi h Sid 6 12 18
ID Circuit Current VD=15V 1g 1 e mA
Low Side 11 23 35
VIN (on) Input On Signal Voltage 1.0 1.3 1.6 V
VIN (off) Input Off Signal Voltage 1.5 1.8 2.1
IFO Foul Output Current (Protection) VD=15V, VFO=15V 3 5 7 m A
Foul Output Current (Normal) - - 1
V =15V 40 43 -
0C Over Current Protection Trip Level D A
VD=15V, Toe 125°C 32 - -
toff(OC) Over Current Cut Off Time VD=15V 5 10 18 ,us
o T t Tri Level 100 110 120
OT ver .empera ure p Case Temperature "C
Protection Reset Level 80 90 100
UV Control Supply Under- Trip Level 11.3 12.0 12.7 V
UVr Voltage Protection Reset Level 11.8 12.5 13.2
tFO Foul Output Pulse Width VD=15V 5 10 15 ms
Thermal Resistance (Tj = 25°C)
SYMBOL ITEM TEST CONDITION SPEC UNIT
MIN TYP. MAX.
Rth (j-e) Junction to Case Thermal INV. IGBT - - 2.0
Rth (j-e) Resistance INV. FWD - - 4.5 "C /W
R h Case to Fin Thermal Resistance - - O 2 -
t (e-f) with compound '
1998-07-01 4/10
TOSHIBA MIG20J103H
ELECTRICAL CHARACTERISTICS TEST CIRCUIT (VCE (sat), VF, ICES, ID, VIN, IFO, tF0)
a) VCE (sat) P(U, V, W)
I-P,- VD
3:15kQ V _,
15V .-ty- VIN 0 l IC
[CI'",' GND -
U, V, W(N)
b )_F P(U, V, W)
l I k5 VD
15V VIN vo E) l 10
[l':"','] GND ----- v
U, V, W(N)
c)1c_Es P(U V W)
t=o, VD
I 3:15k0 V _I -- VCC
15V -o- VIN o 600V
[l'',','] GND - V
U, V, W(N)
(1)13 -Cij-o- VD
-t:9- GND
e) VIN(OFF) P(U, V, W)
IN(0N) jri1rsflry D V _, (v)
15V to- VIN o TIC
I_/l_o_ GND - V
U, V, W(N)
)ts'O U, V, W
15V l 'tet.,? Ci) l IC
DE: GND - . i
g)IFo Ci? , U,V,W
15V -.- VIN
1998-07-01 5/10
TOSHIBA MIG20J103H
OUTLINE : TOSHIBA 2-99E1A Unit in mm
I I ‘(cw 0,5)
0'11 21314515
356i03
1. VINU 2. VDU 3. GNDU
4. VINV 5. VDV 6. GNDV
7. VINW 8. VDW 9. GNDW
10. GNDL 11 VDL 12.VINX
13. VINY 14-VINZ 15-VFO
1998-07-01 6/10
TOSHIBA MIG20J103H
TIMING CHART (High side)
Typical example of drive circuit Intelligent Power Module
photocoupler' VD 'i.' i.." +
IF=16mA'
*1) VAU
Driver
*1) or VAV, VAW
*2) or VINV, VINW
*3) or ng, VGW
*4) or V, W
VD - UV
Te OTr
VGU 7V - fl-fl--------', r
t2 F- t3 -H
-ilt t1
I oc - "lc-,
0 Fl (l I I l l
UV : Under-Voltage Trip Level t1 .' 2.5/es (Typ.)
UVr : Under-Voltage Reset Level t2 : 10ps (Typ.)
OT : Over Temperature Trip Level t3 : 10ms (Typ.)
OTr : Over Temperature Reset Level
OC : Over Current
1998-07-01 7/10
TOSHIBA
TIMING CHART (Low side)
Typical example of drive circuit
photocoupler
IF-- 16mA
MIG20J103H
Intelligent Power Module
*1) VAX o:i-,
rfLFiG'i'fai')
*1) or VAy, VAZ
*2) or VINY, VINZ
*3) or VGy, VGZ
Driver
*4) or V, W
VD - UV
OT - OTr
VGX 7V _..-.-.-.-.-.-.-.- C -"--------c1-, -
t2 F- t3 -l
-ilt' t1
I oc J I "lc,
C 0 Fl fl |_I |_| l-
UV .' Under-Voltage Trip Level
UVr .' Under-Voltage Reset Level
OT : Over Temperature Trip Level
OTr : Over Temperature Reset Level
Oi? : Over Current
t1 : 2.5ps (Typ.)
t2 : 10ps
t3 : 10ms
(Typ.)
(Typ.)
1998-07-01 8/10
TOSHIBA
IC - VCE
COMMON EMITTER
g Tc=25°C
S? VD=17V
2; 15V
'il \13V
o _.....-..--"
0 0.5 1 1.5 2 2.5 3 3.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
II? - VI?
COMMON CATHODE
A VGE=0V
Sr 20 I
Tc=100°C I
m 15 I
E / Tc=25°C
© 10 I I
E3 5 I
O / f,,w'
0 0.5 1 1.5 2 2.5 3 3.5
FORWARD VOLTAGE VF (V)
SWITCHING TIME - IC
COMMON EMITTER
Vcc=300V
VD=15V
li, L-Load
v Tc=100°C
10 100
COLLECTOR CURRENT IC (A)
10 (A)
COLLECTOR CURRENT
SWITCHING TI ME (,us)
(X 100A)
REVERSE RECOVERY TIME t" (/13)
PEAK REVERSE RECOVERY CURRENT
MIG20J103H
IC - VCE
COMMON EMITTER
Te = 1 00°C
v =17v
D (if?::
15 tf ‘13V
0 0.5 1 1.5 2 2.5 3 3.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME - IC
COMMON EMITTER
VCC = 3 00V
VD = 15V
L-Load
Tc = 25°C
k (on)
tc (off)
1 10 100
COLLECTOR CURRENT IC (A)
trr, Irr - IF
COMMON CATHODE
di/dt=150A/ps
VD = 15V
Tc=25°C
1 10 100
FORWARD CURRENT IF (A)
1998-07-01 9/10
TOSHIBA
trr, Irr - IF
(XIOOA)
COMMON CATHODE
di/dt=160A/ps
VD = 15V
Tc = 100°C
REVERSE RECOVERY TIME 1;” (/15)
10 100
FORWARD CURRENT IF (A)
PEAK REVERSE RECOVERY CURRENT
REVERSE BIAS SOA
(LESS THAN 0C TRIP LEVEL)
o Tis125''c
VD=15V
0 100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
OVERCURRENT - TEMP
tl VD=17V
"x 15v?irieT,ur.x-.i,,
g 40- 13v—-%—:$::\:-
o 20 40 60 80 100 120
CASE TEMP Tc (°C)
SWITCHING LOSS
THERMAL TRANSIENT RESISTANCE
Rm” ("C/W)
UNDER-VOLTAGE TRIP LEVEL UV
UNDERVOLTAGE RESET LEVEL UVr
MIG20J103H
Eon, Eoff - IC
COMMON EMITTER
Vcc=300V
VD-- 15V
L-Load
Tc-- 100"C
tum-on Loss
tum-off Loss
10 100
COLLECTOR CURRENT 1C (A)
Rth (t) - tw
IODE STAGE
TRANSISTOR STAGE
1 10 100 1000 10000 100000
PULSE WIDTH tw (ms)
UNDERVOLTAGE - TEMP
-".-.-_
0 20 40 60 80 100 120
CASE TEMP Tc (°C)
1998-07-01 10/10
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