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MHW803-2 |MHW8032MN/a2avaiUNF power amplifier


MHW803-2 ,UNF power amplifierELECTRICAL CHARACTERISTICS V = V = V = 7.5 Vdc, (Pins 2,3,4), T = 25°C, 50 * Systems1 s2 s3 CCharac ..
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MHW803-2
UNF power amplifier
The RF Line -
Capable of wide power range control as encountered in portable cellular radio
applications (30 dB typical). MHW803–2 806–870 MHz Specified 7.5 Volt Characteristics
RF Input Power = 1 mW (0 dBm)
RF Output Power = 2 Watts
Minimum Gain (VControl = 4 V) = 33 dB
Harmonics = –45 dBc Max @ 2 fo 50 Ω Input/Output Impedance Guaranteed Stability and Ruggedness Epoxy Glass PCB Construction Gives Consistent Performance and Reliability Circuit board photomaster available upon request by contacting RF Tactical
Marketing in Phoenix, AZ.
MAXIMUM RATINGS (Flange Temperature = 25°C)
ELECTRICAL CHARACTERISTICS Vs1 = Vs2 = Vs3 = 7.5 Vdc, (Pins 2,3,4), TC = 25°C, 50
System
NOTES: Adjust Vcont for specified Pout. VCont = 0 Vdc.
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SEMICONDUCTOR TECHNICAL DATA
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