MHW2821-1 ,UHF Silicon FET Power AmplifierELECTRICAL CHARACTERISTICS (continued) (V = V = 12.5 Vdc, V = 12.5 Vdc, T = +25°C, 50 Ω system, unl ..
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MHW6182 ,550 MHz CATV AmplifierMAXIMUM RATINGSRating Symbol Value UnitRF Voltage Input (Single Tone) V +70 dBmVinDC Supply Voltage ..
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MIP3E3SMY , MIP3E3SMY
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MHW2821-1
UHF Silicon FET Power Amplifier
The RF Line -
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz. Specified 12.5 Volt Characteristics:
RF Input Power: ≤ 250 mW (MHW2821–1)
RF Input Power: ≤ 300 mW (MHW2821–2)
RF Output Power: 20 W (MHW2821–1)
RF Output Power: 18 W (MHW2821–2) LDMOS FET Technology Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture 50 Ω Input/Output Impedance Guaranteed Stability and Ruggedness Cost Effective
MAXIMUM RATINGS (Flange Temperature = 25°C)
ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = +25°C, 50 Ω system, unless otherwise noted)(1) Adjust Pin for specified Pout. (continued)
Order this document
by MHW2821/D-
SEMICONDUCTOR TECHNICAL DATA
