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MHL21336MOTN/a11avaiMHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier


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MHL21336
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
The RF Line
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Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems. Third Order Intercept: 45 dBm Typ Power Gain: 31 dB Typ (@ f = 2140 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
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