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MGSF1N02LT1ONN/a8110avaiN-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N02LT1GONSEMICONDUCN/a24644avaiPower MOSFET 750 mAmps, 20 Volts


MGSF1N02LT1G ,Power MOSFET 750 mAmps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) 3JRating Symbol Value UnitDrain–to–Source Voltage ..
MGSF1N03L ,Power MOSFET 750 mAmps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JN−ChannelParameter Symbol Value UnitDrain−to−Sour ..
MGSF1N03LT1 ,Power MOSFET 750 mAmps, 30 VoltsMaximum ratings applied to the device are individual stress limit values (not(Pb−Free)normal operat ..
MGSF1N03LT1G ,Power MOSFET 750 mAmps, 30 VoltsELECTRICAL CHARACTERISTICS0.24 0.16150°C150°C0.140.19V = 4.5 VV = 10 VGSGS0.1225°C0.140.125°C-55°C0 ..
MGSF1N03LT3 ,N-CHANNEL ENHANCEMENT-MODE TMOS MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MGSF1P02ELT1 ,Power MOSFET 750 mAmps, 20 VoltsAPPLICATION NOTEIntroduction regulator whenever the 5 V main supply is not present.When the 5 V mai ..
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MGSF1N02LT1-MGSF1N02LT1G
Power MOSFET 750 mAmps, 20 Volts
MGSF1N02LT1
Preferred Device

Power MOSFET 750 mAmps, 20 Volts
N–Channel SOT–23

These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
ic,good price


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