MG8Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.r------"--'-'?--'--------------,O The Electrodes are Isolated From Case.14IU.6’ 14IU.6 ..
MGA-23003-TR1G , 3.3-3.8 GHz WiMAX Power Amplifi er (3x3mm)
MGA-30116-TR1G , 150MHz – 1GHz 1/2 Watt High Linearity Amplifier Standard QFN 3X3 package
MGA-30689-BLKG , 40MHz - 3000MHz Flat Gain High Linearity Gain Block
MGA-30689-TR1G , 40MHz - 3000MHz Flat Gain High Linearity Gain Block
MGA-43228-TR1G , 2.3–2.5 GHz 29dBm High Linearity Wireless Data Power Amplifi er
MIC9130BM , High-Voltage, High-Speed Telecom DC-to-DC Controller
MIC9130BM , High-Voltage, High-Speed Telecom DC-to-DC Controller
MIC9130YM , High-Voltage, High-Speed Telecom DC-to-DC Controller
MIC9130YM , High-Voltage, High-Speed Telecom DC-to-DC Controller
MIC9131BQS , High-Voltage, High-Speed Telecom DC-to-DC Controller
MIC913BM5 , 350MHz Low-Power SOT-23-5 Op Amp
MG8Q6ES42
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG8Q6ES42
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG8Q6ES42
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
0 The Electrodes are Isolated From Case.
o 6 IGBTs are Built Into 1 Package. . 10:03
- II II N
1bh2110.2 d
"H-H-- f4
o Enhancement-Mode
44.7i0.6
0 Low Saturation Voltage N
. . . $4
VCE(sat) =4.0V(Max.) 4 tb? 65 DEPTHSO n
12-FAST-oN-TAB #110
2010.3 215:0. 21.5:03 5-FAST-0N-TAB #250
trr=0.5ps(Max.) r IFil- FI- IF},
i _ l 42. 7140.6
0 High Speed : tf--0.5ps(Max.)
J24.5:i:l .
16.51:!
JEDEC -
EIAJ -
TOSHIBA 2-93A3A
Weight : 220g
EQUIVALENT CIRCUIT
+ C ' '
GU GV GW K
(BU) (BV) (BW)
EU 0 o U
Eve C) V
Ewo--oW
GX K GY K GZ K
(BX) (BY) (BZ)
EZ o-.
EX o-. EY o-.
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG8Q6ES42
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i- 20 V
Collector Current DC IC 8 A
lms ICP 16
Forward Current DC IF 8 A
lms IFM 16
Collector Power Dissipation PC 80 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 ''C
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque - 3 N . m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i' 10 "
Collector Cut-off Current ICES VCE = 1200V, VGE =0 - - 1.0 mA
Gate-Emitter
Cut-off Voltage VGE (OFF) 10 - 8mA, VCE - 5V 3.0 - 6.0 V
Collector-Emi)
Saturation Voltage VCE (sat) IC - BA, VGE - 15V - 3.0 4.0 V
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 900 - pF
Rise Time tr cl - 0.3 0.6
Switching Turn-on Time ton 15V 1500' g - 0.4 0.8 s
Time Fall Time tf 0 - 0.25 0.5 p
-15V 600V
Turn-off Time toff - 0.8 1.5
Forward Voltage VF IF = 8A, VGE = 0 - 1.4 2.5 V
. IF=8A, VGE= -10V
Reverse Recovery Time trr di / dt= 100A /ps - 0.2 0.5 ps
. . Transistor - - 1.56 o
Thermal Resistance Rth (j -e) ' C / W
Diode - - 1.8
1997-03-03 2/5
TOSHIBA MG8Q6ES42
IC - VCE VCE - VGE
COMMON EMITTER
Tc = - 40''C
COMMON
1 EMITTER
To = 25°C
COLLECTOR CURRENT [Q (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
0 1 2 3 4 5 6 7 8 O 2 4 6 8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON EMITTER
Tc = 26"C
COMMON EMITTER
Tc = 1 25°C
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR-EMITI‘ER VOLTAGE VCE (V)
o 2 4 6 8 1o 12 14 16 18 20 o 2 4 6 8 1o 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
10 - VGE VCE,VGE - QG
COMMON 25 e.
2 1 EMITTER -40 8 'tr?.
v - . > =
VCE--5V Tc=125oc VCE ov 16 8
Pn p, u
a 1 g 12 a
5-: > 4
C) E S
O E ttt
n: - 8 =
E M COMMON H
'ii a 2
4: o EMITTER ca
.4 F a':
8 g RL=750 t;
d, Tc=25°C U
0 2 4 6 8 IO 12 14 16 18 20 0 20 40 60 80 100 120
GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA MG8Q6ES42
SWITCHING TIME - IC SWITCHING TIME - RG
COMMON EMITTER
VCC = 600V, VGE = , 15V
COMMON EMITTER
Vcc = 600V, IC = 8A
Rcr=1500, Tn =25°C
"it 3 VGE= -bc16v,Tc--26"c
f} toff 5;
ge, ge,
0 2 4 6 8 3 5 10 30 50 100 300 500 1000 3000
COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (0)
IF - VF 2 trr, Irr - IF
JR COMMON CATHODE
Ci? 92‘ F?, di/dt=100A/us
E g C, VGE = - 10v, Tc=25°C
E g M trr
ti E - 1
i? i'i,'i'k"
g Tc = 125°C 25 -40 (ih'i)
g COMMON CATHODE tie
VGE = ov td E
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 E E o 2 4 6 8
FORWARD VOLTAGE " (V) FORWARD CURRENT y (A)
c - VCE Rth(t) - tw
Tc=25°C
1000 a
, DIODE STAGE
P; th'
U SE TRANSISTER STAGE
m 1 3%
ti a -
p, E i
6 Flst'
g COMMON E
g EMITTER H,
VGE -- ov m
f=1MHz g
Tc=25°C
G, 0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V) PULSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA MG8Q6ES42
SAFE OPERATING AREA REVERSE BIAS SOA
s. IC MAX. (PULSED) yd.
S 10 \ N £50ng (ii
L,' .-.I o
ii 5 IC MAX. N li," lOO/xSX- H
E n (CONTINUOUS) h- DC N , E
co o OPERATION _ il
M , I .
g 1 Irnsyd. N g
{g .yd. SIgGLE 8
N NREPETITIVE
d 0.5 PULSE Te=25'C , 3 COMMON EMITTER
o o 3 gggxggDMUST BE d Tys 125°C
. C = +
LINEARLY WITH \ o VGE -15V
INCREASE IN . Rg=1509
TEMPERATURE.
ihll 3 10 30 100 300 1000 3000 . 0 200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5
www.ic-phoenix.com
.
