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MG75Q2YS50ToshibaN/a12avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


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MG75Q2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG75Q2YS50

High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3 µs (Max) @Iinductive load Low saturation voltage
: VCE (sat) = 3.6 V (Max) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from case
Equivalent Circuit

Maximum Ratings (Ta = 25°C)
― 3 / 3
Weight: 202g
Unit: mm
ic,good price


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