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MG600Q1US41
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG600Q1US41
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MGiti00Q1iUS41
HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
0 High Input Impedance EQUIVALENT CIRCUIT
0 High Speed :tf=0.5ps(Max.) C ,
0 Low Saturation Voltage : VCE(Sat)=4.0V(MaX.) co-LCP-o-OE
o Enhancement-Mode
0 Outline :TOSHIBA 2-109E1A
(See page 3 for the device outline)
0 Weight : 590g (TYP.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES uF20 V
Collector Current C C 600 A
lms ICP 1200
Forward Current DC lp 600 A
1ms IFM 1200
Collector Power Dissipation
(Tc: 25°C) C 3600 W
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -40--125 ''C
Isolation Voltage V1301 2500(AC 1 minute) V
Screw Torque
(Terminal : M4 / M6 / Mounting) - 2 / 3 / 3 Nan
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/6
TOSHIBA MG600Q1US41
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i- 20V, VCE = 0 - - i' 60 ,uA
Collector Cut-off Current ICES VCE = 1200V, VGE =0 - - 6.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) IC =600mA, VCE = 5V 3.0 - 8.0 V
CoHeetor-Emitter - -
Saturation Voltage VCE(sat) IC - 600A, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = o, f = lMHz - 72000 - pF
Rise Time tr C) - 0.3 0.6
Swit hin Turn-on Time t 15V - 0.4 0.8
Ti c g . on rum. ..
lme Fall Time tf - 0.2 0.5
-15V 6 V
Turn-off Time tog oo - 0.8 1.5
Forward Voltage VF IF = 600A, VGE = 0 - 2.3 3.2 V
. IF = 600A, VGE = - 10V
Reverse Recovery Time trr di / dt= 1000A /ps - 0.25 - ,us
T . t - - 0.035
Thermal Resistance Rth(i-e) rans1s or T /W
Diode - - 0.125
1997-03-03 2/6
TOSHIBA MG600Q1US41
OUTLINE : TOSHIBA 2-109E1A Unit in mm
3-M4 4--M6 4-¢65i03
29.3drl.2
28K0.6
80uF0.8
6KO.6 16K0.6
108K0.8
2 9i0.8__ 18.8:t0.8
103 ' .3 Q
18.8k0.8 22§#08
Weight : 590g (TYP.)
1997-03-03 3/6
TOSHIBA MG600Q1US41
IC - VCE IC - VCE
1200 5r-12 COMMON 1200 COMMON
l I EMITTER EMITTER
' I Tc=25°C Tc=125"C
1000 1000
PC=3600W
_ - -- -- ___ --
800 10 800
600 600
400 400
COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
0 2 4 6 8 10 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V) C0LLECT0WEMITTER VOLTAGE VCE (V)
VCE - VGE VCE - VGE
COMMON
EMITTER
Tc = 25'C
COMMON
EMITTER
Tc = - 40°C
Ic-- 1200A IC-- 1200A
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR~EMITTER VOLTAGE VCE (V)
0 4 8 12 16 20 0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE IC - VGE
COMMON COMMON
1200 EMITTER
EMITTER
Tc= 125°C VCE=5V
Ic-- 1200A
COLLECTOR CURRENT [C (A)
COLLECTOR—EMITTER VOLTAGE VCE (V)
0 4 8 12 16 20 O 4 8 12 16
GATEYEMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
1997-03-03 4/6
TOSHIBA
MG600Q1US41
COLLECTOR—EMITTER VOLTAGE VCE (V)
SWITCHING TIME
It (ns)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY TIME
VCE, VGE - QG
COMMON
EMITTER
RL = 19
To = 25°C
0 1200 2400 3600 4800 6000 7200
CHARGE QG (nC)
SWITCHING TIME - RG
COMMON Tc= 25°C
EMITTER 125°C
Vcc=600V
IC=600A
V =i15V tofr
1 3 5 10 30 50 100 300
GATE RESISTANCE RG (n)
trr, Irr - IF
50 COMMON
30 CATHODE
Tc-- 25°C di/dt=1000A/,us
1 - -- 125°C VGE---t0v
0o 100 200 300 400 500 600 700
FORWARD CURRENT IF (A)
GATE-EMITTER VOLTAGE VGE (V)
SWITCHING TIME - IC
E: COMMON
t EMITTER
Vcc=600V
Te-- 25°C VGE= uF15V
- - - 125°C RG=2.00
0 100 200 300 400 500 600
COLLECTOR CURRENT 1C (A)
IF - VF
COMMON
CATHODE
Ci 1200 VGE=0V
E 1000 Tc=125°C
W, 200
0 0.5 1 1.5 2 2.5 3 3.5
FORWARD VOLTAGE VF (V)
C - VCE
U) 10000
E: 3000
'd 1000
0 COMMON EMITTER
VGE = 0
300 f=1MHz
Tc = 25°C
0.03 0.1 0.3 l 3 10 30 100
C0LLECT0R-EMITTER VOLTAGE VCE (V)
1997-03-03 5/6
TOSHIBA MG600Q1US41
Rth(t) - tw SAFE OPERATIHG AREA
1 I I Ill) ll 1 I l
I MAX. (PULSE) X
8 Tc=25°C A 1 C x tt so s yd.
E 0.3 :5 00010 MAX.(CONTINUOUb) \ /t .
ti, DIODE STAGE J.? 500 1 , N
k',-, 0.1 B 300 N k Sy 100/ss ik-
'4 3 p; N N,
"s 0.05 TRANSISTER STAGE E 100
iie 0.03 (D IK. SINGLE N lms X _
M C2 . o 50 NONREPETITIVE
E .ie," g 30 PULSE N \
a M 0.01 Em Tc=25"C l "
a g 10 CURVE MUST L
a 0.005 :3 BE DERATED h
p; 0.003 o 5 LINEARLY WITH ‘DC OPERATION
g . o 3
INCREASE IN
E TEMPERATURE. l
0.001 - - 1
10" 10 10 1 10 1 3 10 30 100 300 1000 3000
PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE VCE (V)
REVERSE BIAS SOA
V 1000
g: 100
ti 30 TjS120%
VGE=i15V
RG=2.00
0 200 400 600 800 1000 1200 1400
C0LLECT0R-EMITTER VOLTAGE VCE (V)
1997-03-03 6/6
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