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MG50Q6ES40TOSHIBAN/a5avaiN CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)


MG50Q6ES40 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS. 13a1",3.s.14svs, WMw', I f T(HFRANFF‘. T51'r,)$0.5 UNLE SO The Electrodes are Isolate ..
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MG50Q6ES40
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MGSOQ6ES40
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG50Q6ES40
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS. 14.5 14.5 4-d5.r_ho.3
7 -Nid
TOLERANCE I S
$0.5 mm UNLESS
o The Electrodes are Isolated from Case. OTHERWISE NOTED.
0 6 IGBTs are Built Into 1 Package.
0 Enhancement-Mode
0 Low Saturation Voltage
VCE (sat) =4.0V (Max.)
_ '185 18.5 '18.5 less'
68i0.6
94i0.8
11-:ist-py-'iabtk11_0
0 High Speed :tf--0.5ps(Max.)
- -1-t-
r (P-l-ll-a, m
33F ii,
JEDEC -
EIAJ -
TOSHIBA 2-94B1A
Weight : 690g
EQUIVALENT CIRCUIT
+ o . . ' O +
GU GV GW
(BU) (BV) (BW)
EU c 0U
EV C 0V
EW t2--d2Hr
GX K GY K GZ jf
(BX) (BY) (BZ)
EZ cr-
EX o- EY Cr-. .
- C o-
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG50Q6ES40
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i- 20 V
Collector Current DC IC 50 A
lms ICP 100
Forward Current DC IF 50 A
lms IFM 100
Collector Power Dissipation (Tc=25°C) PC 250 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 ''C
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque(Termina1/Mounting) - 2/ 3 N . m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i- 10 ,uA
Collector Cut-off Current ICES VCE = 1200V, VGE = 0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) 1C = 50mA, VCE = 5V 3.0 - 6.0
Collector-Emi)
Saturation Voltage VCE(sat) IC - 50A, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = o, f = lMHz - 6000 - pl?
Rise Time tr - 0.3 0.6
. . . Turn-on Time ton 24n N - 0.4 0.8
Switching Time 15V 0 m I H MS
Fall Time tf 0 J_LI- 15V - 0.2 0.5
Turn-off Time toff - 600V - 0.8 1.5
Forward Voltage VF IF = 50A, VGE = 0 - 2.0 2.5 V
. IF = 50A, VGE = - 10V
Reverse Recovery Time trr di / dt= 100A /,us - 0.25 0.5 gs
T . t - - 0.5
Thermal Resistance Rth(j-c) rams or 'C /W
Diode - - 1.0
1997-03-03 2/5
TOSHIBA MGSOQ6ES40
IC - VCE VCE - VGE
COMMON i 20 15 ts COMMON
"iii' EMITTER I y EMITTER
c, Tc -- 25°C 8 Te-- - 40"C
g E I 100A
a g 's,,,..--.......:"'-" l
8 2 20-
o 2 4 6 8 10 o 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
A 1 A 12
E COMMON 1, COMMON
' EMITTER y EMITTER
M Te=25''C a Te-- 125°C
td ttt ,
E Ic=IOOA t k \\IC=1ooA
'ill' 50 E1 4 \
tit a "ss.-........ 50
5% F, _
.1 .4 20
0 4 8 12 16 20 o 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
IC - VGE VCE,VGE - QG
A 1 20
25 I / I Lt COMMON A
A 8 EMITTER tt
"S > RL=120 16 'd
, = o >
J.? -40 ch=125°c g Tc 25c
m o 12 g
n: > ._1
td a O
g E 8 ‘55
4 COMMON 0 ml
d EMITTER t 4 E
O ti g
o 4 8 12 16 20 0 100 200 300 400 500 603
GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA MG50Q6ES40
SWITCHING TIME - IC SWITCHING TIME -RG
COMMON EMITTER COMMON EMITTER
3 VCC = 600V vcc = 600V
Ic = 50A
A A VGE -- i 16V
3 3 Tc=25°C
c: 0 ca
x 0 :1:
0 10 20 30 40 50 1 3 5 10 30 50 100 300
COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (n)
IF - VF g trr, Irr - IF
a' 5?,
"3': E J:
Fr ' -
F,' E:
o B > 0
Ct ttt 8
3: L73 [:1 0
g g: COMMON CATHODE
g COMMON E g di/dt=100A//xs
a. CATHODE z y 0.1 VGE= _ 10V
V =0v m - a
GE < g Tc=26 c
0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 60
FORWARD VOLTAGE " (V) FORWARD CURRENT IF (A)
c - VCE Rth(t) - tw
m Tc=25°C
e a DIODE STAGE
ik2 <0
ti 5: A TRANSISTOR STAGE
m COMMON z
5 EMITTER a
VGE--0ir a
f=1MHz g
Tc--25''C F
0.03 0.1 0.3 1 3 10 30 100 904’ 10-2 IO-l 1 10
COLLECTOR-EMITTER VOLTAGE VCE (V) PULSE WIDTH tw (s)
1997-03-03 4/5
SAFE OPERATING AREA
500 1 1
300 [I [l
10 MAX. (PULSED) M.'.
Shoo I 1rrllg1 ' ' 's -
IC MAX.(CONTINUOU ) t, 50szs yd. EE
Sis: _iin'tll'll iii w‘
230 [llllNll MIX N
100 .yd. h
© .)rd. SINGLE )ts As "N _
: NONREPETITIV l ll 's, _
o 10 PULSE ', 1 X
t Tc=25°C y?" " _
g 5 CURVES MUST " Ill l
'4 BE DERATED
8 LINEALY WITH PC OPERATION \
INCREASE IN "
1 TEMPERATURE. N
1 3 10 30 100 300 1000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 1c (A)
MG50Q6ES40
REVERSE BIAS SOA
Trs 125°C
VGE = i 15V
RG = 249
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5

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