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MG50Q1BS11
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG50Q1BS11
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MGi50Q'illBS'il1l
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
ti3:hati
45.8d:0.5
0 High Input Impedance
0 High Speed : tf=1.0/zs(Max.)
0 Low Saturation Voltage: VCE(sat) = 2.7V (Max.)
0 Enhancement-Mode
o The Electrodes are Isolated from Case. 29:ht15
3310.5 G
2Td: as g 8
EQUIVALENT CIRCUIT m T g
3 Il N
'll, it'. I V n
G (B) o-l
E JEDEC -
EIAJ -
TOSHIBA 2-33D1A
Weight : 90g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co11eetor-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES 1'20 V
DC I 50
Collector Current C A
lms ICP 100
Collector Power Dissipation (Tc=25°C) PC 300 W
Junction Temperature Ti 150 "C
Storage Temperature Range Tstg -40--125 "C
Isolation Voltage V1501 2500 (AC 1 Minute) V
Screw Torque(Termina1/Mounting) - 2/ 3 N . m
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MG50Q1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = ul- 20V, VCE = 0 - - i' 500 nA
Collector Cut-off Current ICES VCE = 1200V, VGE = 0 - - 1.0 mA
Collector-Emitter Voltage VCES IC s 1mA, VGE = 0 Note 1 1200 - - V
Gate-Emitter Cut-off Voltage VGE(OFF) IC = 50mA, VCE = 5V 3.0 - 6.0 V
Collector-Emitter - -
Saturation Voltage VCE(sat) IC - 50A, VGE - 15V - 2.3 2.7
Input Capacitance Cies VCE = 10V, VGE = 0, f = lMHz - 7800 - pF
Rise Time tr 24n ct - 0.3 0.6
- . 15V - .4 .8
Switching Time Turn on Time ton 0 oC:LI 2 0 0 prs
Fall Time tf - 15V / - 0.6 1.0
Turn-off Time toff 600V - 1.2 1.8
Thermal Resistance Rth (i-e) - - - 0.41 °C/W
Note 1 : Do not apply the over rating voltage.
1997-03-03 2/4
TOSHIBA MGSOQ1BS11
Ic - VCE A VCE - VGE
COMMON EMITTER 8 COMMON EMITTER
2 Tc =25°C > Te-- -40''C
- 10 \ M
o PC=300W E
ttt 's E
o _ ti?
t", 2;
ll t 10:100A
0 2 4 6 8 10 0 4 8 12 16 2O
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON EMITTER
Tc = 25°C
COMMON EMITTER
Tc = 125°C
10 = 100A
COLLECTOR -EMI’I'I‘ER VOLTAGE VCE (V)
COLLECTOR -EMI'I'I'ER VOLTAGE VCE (V)
0 4 8 12 16 20 0 4 8 12 16 20
GATE-EMITER VOLTAGE VGE (V) GATE-EMITER VOLTAGE VGE (V)
IC - VGE VCE,VGE - QG
COMMON EMITTER g i?
- VCE=5V m g
D g 15 tr
tt 10 >
o T 125°C E ttt
g ti? COMMON E
t", a: EMITTER E
ll t; RL=120 5 ,
8 g Tc=25°C 'e?,
o 2 4 6 8 IO 12 14 0 100 200 300 400 sol)
GATE-EMITER VOLTAGE VGE (V) CHARGE QG (nC)
1997-03-03 3/4
TOSHIBA
MG50QIBS11
SWITCHING TIME - IC
COMMON EMITTER
VCC=600V, Rg=249
VGE = i15V, Tc=25°C
SWITCHING TIME (#8)
10 20 30 40 50 60 70
COLLECTORCURRENT IC (A)
C -VCE
COMMON
EMITTER
VGE = 0V
f= IMHz
Te = 25''C
CAPACITANCE C (11F)
0.03 0.1 0.3 1 3 10 30 100
C0LLECT0R-EMITTERV0LTAGE VCE (V)
SAFE OPERATING AREA
l l Hill“ l
I I IIIIIII I
A la MAX.(PULSED)E
s. 100 Lltlrrtlt __
10 MAX.
J.? (CONTINUOUS)
50 I I MW
E 30 .
X SINGLE ls, D
NONREPETITIVE
D 10 PULSE Tc-25°C
8 CURVES MUST _
M 5 BE DERATED \
ti 3 LINEARLY WITH _
8 INCREASEIN N
TEMPERATURE. \
1 3 10 30 100 300 1000 3000
COLLECTOR-EMITTERVOLTAGE VCE (V)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600V
VGE = i 15V
10 = 50A
Tc = 25°C
SWITCHING TIME (Id)
3 10 30 100 300
GATE RESISTANCE RC. (n)
Rth (t) - tw
Tc = 25°C
Ru. 0:)
TRANSIENT THERMAL RESISTANCE
(°C/W)
10-8 10-2 IO-l 1 10
PULSE WIDTH tw (s)
REVERSE BIAS SOA
Tj§125°C
VGE = i 15V
RG=24Q
COLLECTOR CURRENT 10 (A)
200 400 600 800 1000 1200 1400 1600
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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