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MG50G2YM1
MOSFET Power Module
T()StlTBh, 4D7SCRE'l'E/'0PT0+
i TOSHIBA
... n» w-..
. .......v........ .. ,. . -.
90??250 Tofu 18A (0 I SCRETE IOPTO)
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER SUITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
_ FEATURES:
. The Drain is Isolated from Case.
. . 2 NOS PETS are Built-in to 1 Package.
. With Built-in Frei Wheeling Diode.
- Low Drain-Source ON Resistance
t RDS(0N)=O.143(Max.)(1D=50A)
. .-Eahancemettt-Hode.
EQUIVALENT CIRCUIT
(c1) (m/cz) (1:2)
DI s1/n2 s2
" " oz "
(BI) (El) (32)(E2)
MAXIMUM RATINGS (Ta-25°C)
=10 os:irurrirasuo mummy: u Ir, 9
V 900 16436 01"qu
TOSHIBA CTR MODULE
MG 5 O tii? YM 1
SILICON N CHANNEL MOS TYPE
Unit in mm
c-rata-tyy-TAB)
3-145 w, 2-gfts6:ttils
'iii'"'''-?)',,..?;;:,
18 +0.6
zaxqgkeius B1
' 1015108 .
3:et15, 22:}:08 25:05 _22Ati8 7.4i
105:et15 58:53:05
JEDEC -
EIAJ -
TOSHIBA 2-108A1A
Height t 255g
Height ' 255g
CHARACTERISTIC SYMBOL RATING UNIT
Draitt-Murce Voltage Vnss 450 V
Gate-Source Voltage VGSS A20 V
Drain Current DC In iSO A
lms i100
Drain Power Dissipation (Tc=25°C) PD 400 W
Channel Temperature Tch 150 "C
Storage Temperature Range Tstg -40~125 "c
Isolation Voltage visol 2500 (AC, 1 Minute) V
Screw Torque (Terminal/Mounting) - 30/30 kg'cm
NGSOGZYMl-l
- 444 - TOSHIBA canpunATlnN
"TOSHIBA 4HyTSCREyT'E/()PT()1 =10 oirlruocr7iesirrynurisr7, l,
9097250 TOSHIBA tD1SCRETE/OPTO) 900 16437 1rtu3e?-a7
TOSHIBA MG50G2YM1
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current 1688 VGs=120V, VDSBO - - i150 11A
Drain Cut Off Current Inss VD5=450V, Vcs=0 - - 3.0 mA
Drain-Source
Breakdown Voltage V(BR)DSS ID Ithrth, VGS O 450 - - ll
Gate-Source Cut-off Voltage Vcs(opp) VD5=10\’, ID=50mA 1.8 2.8 4.0 V
Forward Transfer Admittance lstl VDs=10V, ID=50A 12:0 21.0 - s
Drain-Source ON Resistance RDS(ON) 1D=50A, Vcs=10V - 0.09 0.14 n
Input Capacitance Ciss VDs=10V, VG3=0, f=1MHz - 13000 - pF
Rise Time tr Von .- - 350 700
Turn-on Time ton o Vm ct P" 400 800
Switching Time -ii'),,0r va-l It) ns
Fall Time tf 10” . - 100 200
vDDei300v
Turn-off Time toff mm cycmslqa - 650 1300
Source Drain Forward Voltage Vpsp ltr-50A, VGSBO - 1.15 1'.95 ll
Reverse Recovery Time trr IDE-SOA’ RG=50 - 250 500 ns
Vcs=-10V, di/dt=150A/ps
Thermal Resistance Rth(ch-c) - - 0.31 "c/u
Ht?50t?2yrf1-2
- M5 - TOSHIBA CORPORATION
JTOSHI:BA 4DirSCRETE/)p'l'01
9097250 TOSHIBA tDrSCRETEft0PTO)
TOSHIBA
SEMICONDUCTOR
TECHNICAL DATA
'le oc0cuvrizsuo UDLEHBB ll
900 16438 irr--39-i77
MGSOG2YM1
ID - Vos
common semen
,1.i' vDs=1ov
H Tc=25t
o 2 l 6 e 10
aA'rn-soxmcr: VOLTAGE 1res (v)
= a I C . - 446 -
DRAIN CURRENT ID (A) A
DRAIN-EOURCE VOLTAGE 7178 (V)
In - VDs
COMMON SOURCE
Te = Mt:
p _ l a " 16 20
DRAIN-SOURCE vommm vns (v)
VDs - Vas
COMMON SOURCE
Tc = est
Ip=10A
o l 8 12 16 20
GATE-SOURGE VOLTAGE V03 (V)
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE SATURATION VOLTAGE
Vnswu) (V)
Vns - Vos
COMMON SOURCE
To " -40'C
11:): 10A
4 8 12 M 20
OATE-SOURCE VOLTAGE V55 (V)
Vns - Vos
COWON SOURCE
To = 125'C
t a 12 16 a)
OATE-SOU‘RCE VOLTAGE vas (v)
VDS(0N) - Tc
COMMON SOURCE
VOS=IOV
ID=15A
o 40 BO 120 160
CASE TEMPERATURE Tc (1:)
MGSOGZYHl-B
TOSHIBA CDRPDHA‘I’IDN
TOSHIBA f0ireitrf'T'liv0f2'r03"
9097250 TOSHIBA tDtSCRETEfOPTOy
S SEMICONDUCTOR
TO HlBA TECHNICAL DATA
TI DEI]=10=17250 001.0030 0 fr-
. 90D 16439 trrsa9ett,
MGSOGZYMI
SWITCHING TIME - ID
t common SOURCE
vmr-=3.oov, Ra=sn
v s=110v. Tc=25'c
o 10 20 ISO 4.0 50 60
DRAIN CURRENT ID (A)
In - VDSF
5 COMMON DRAIN
r.'? Vos=OV
g 53 80
0 m. 08 1.2 1.6 2.0
I DRAIN-SOURGE VOLTAGE Vnsr (v)
E 0 - VDs
. 30000
t 10000
o B000
a 5000
S 1000
g COMMON 300mm
mat v -
BtX1 1:11:32
10:25’0
G ti 10
DRAIN-SOURCE VOLTAGE Irvs (V)
3050100 800
l AHIZI -447-
BWITCHING TIME - Ra
COMMON SOURCE _
VDD=500V. ID=50A l
E vos=znov. Tc=25t
- toft
s tits 1 3 5 10 so 50 100 l
GATE RESISTANCE Ro m) f
lic; trr, Irr - ID l
ts,) '
£3 t! '
r: , common 0mm i
Egg a:/at=1soA/us :
" Vus=-1°V ;
Em Tc=25‘C I
EE t) -20 -2t) ~30 ~40 -50 I
mm DRAIN CURRENT ID (A) l
PDS, vas - "
COHMON SOURCE
RI, = 6 n
Te '= 25'C
nmm—souncm VOLTAGE Vns (v)
DATE-BOURCE VOLTAGE v05 (v)
ttD 500
0mm omen: Ro (no)
MGSOGZYMl-Zs
TOSHIBA CDRFDRATIDN
TOSHIBA tI)ISCRiiyT'E/0p'l'()1 Til DEDCIEIEI?EEU UULEHHD l: H
i 9097250 TOSHIBA (DISCRETE
l; IOPTO) 900 16440 tor-aan,
SEMICONDUCTOR
[ TOSHIBA . MG50G2YM1
E TECHNICAL DATA " .
SAFE OPERATING AREA Itth(ctv-e) - tw
EID idh'.' -= 7: i N ih , smamc NONREPETITIVE
_ _ (mam) . Po l e N o Til" = PULSE
Ci 50 nu,“ 'B ite "eg': a
- ao-Iso J: . "e 'iii2 10 INFINITE HEAT SINK
J? (coan- N :\
- NUOUS) \0: ‘N .35
Fe O N
a m lllllll (ttx X 5:10
. E i'' SINGLE k, si,' ie 5
q t9 5r NONREPETITIVE ' " Ft 2i
. E s: PULSE Tc=25'C N g lg 20
g CURVES MUST BE DERATED tf
$2 WHEN? WITH INCREASE E
IN TEMPERATURE H
14444111 I IIIIIIII.
B 5 10 so tit) 100 500 too 2000 ltr" 10 lo" IO-I 1 10
DRAIN SOURCE VOLTAGE Vns (v) PULSE WIDTH T1 (6)
F .. ........_~_.. .. n.
- - " ".' . . MGSOGZYMl-S *
um - - . - 4 4 8 - TOSHIBA connommcm
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