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MG500Q1US1TOSHIBAN/a8avaiN CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)


MG500Q1US1 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS 2-M4 2-M6 [email protected]""""'"'"Ge -laiifirLLEI 3| a] 3|TTtrrl, Tnn‘nl- Gtar,csA-, I InPhh ..
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MG500Q1US1
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG500Q1US1
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG500Q1lUS1l
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS 2-M4 A-M-6 4-rr65+-t).9
rn. w.
0 High Input Impedance H E 3
q High Speed : tf=0.5ps (Max.) o
trr = 0.5prs (Max.)
0 Low Saturation Voltage
: VCE(sat)=4.0V(Max.)
o Enhancement-Mode 10:05 54ur0.8
o The Electrodes are Isolated from Case.
EQUIVALENT CIRCUIT rue _ Tun, ' I
E 'sl, ,. . tn g i i A,
' 106:0.8 L 60:0.8
C E JEDEC -
-1 EIAJ -
(g) TOSHIBA 2-109A4A
Weight : 465g
MAXIMUM RATINGS (Ta = 25''C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
DC I 500
Collector Current C A
lms ICP 1000
DC I 500
Forward Current F A
lms IFM 1000
Collector Power Dissipation
P 2900 W
(Tc=25°C) C
Junction Temperature Ti 150 'C
Storage Temperature Range Tstg -40--125 "C
. 2500
Isolation Voltage VIsol (AC, 1min.) V
T T . 1:M4 M
Screw. orque( ermlna / 6/ - 2 /3 /3 Nan
Mounting)
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-03-03 1/5
TOSHIBA MG500Q1US1
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=O - - i500 nA
Collector Cut-off Current ICES VCE=1200V, VGE=0 - - 4.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) Ic=500mA, VCE=5V 3.0 - 6.0 V
Collector-Emitter
= = - 3.0 4.0
Saturation Voltage VCE(sat) IC 500A, VGE 15V V
Input Capacitance Cies VCE = 10V, VGE =0, f = 1MHz - 80000 - pF
Ri Ti t - 0.3 0.6
lse lme r 2.4n C}
Switching Turn-on Time ton 15V o--iacl H, - 0.4 0.8 S
Time Fall Time tf 0 l- - 0.2 0.5 '
-15V 600V
Turn-off Time toff - 0.8 1.5
Forward Voltage VI? IF=500A, VGE=0 - - 3.0 V
. IF=500A, VGE= - 10V
Reverse Recovery Time trr di / dt=3 00 A /ps - 0.25 0.5 gs
T . to - - 0.042
Thermal Resistance Rth (j-e) rans1s r °C/W
Diode - - 0.20
96100IEAA2'
O The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third cgames which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1997-03-03 2/5
TOSHIBA
MG500Q1US1
[C (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COMMON
EMITTER
Tc = 25°C
VGE=7V
0 2 4 6 8 10
COLLECTOR- EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc=25°C
500 IC = 1000A
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON
EMITTER
800 VCE - 6V
Te = 125°C
200 25
O 2 4 6 8 10 12 14
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Te = - MPC
IC=1000A
0 4 8 12 16 20
GATE - EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Tc=125°C
IC-- 1000A
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON EMITTER
RL=1.2Q
Tc=25°C
200 400
0 1000 2000 3000 4000 5000
CHARGE QG (nC)
GATE-EMITTER VOLTAGE VGE
1997-03-03 3/5
TOSHIBA
MG500Q1US1
SWITCHING TIME - IC
COMMON EMITTER
VCC = 600V
VGE = i 15V
RG = 2.49.
Te = 25°C
. 0 100 200 300 400 500
COLLECTOR CURRENT IC (A)
SWITCHING TIME (ps)
COMMON CATHODE
VGE = 0
To = 125°C
FORWARD CURRENT IF (A)
0 l 2 3
FORWARD VOLTAGE " (V)
COMMON EMITTER
VGE = 0 Coes
f = 1 MHz
Tc = 25°C
CAPACITANCE C (pF)
30 50 100 300
COLLECTOR- EMITTER VOLTAGE VCE (V)
0.30.5 l 3 5 10
SWITCHING TIME (,us)
In» (A)
(X 10ns)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY TIME tr,-
Rth (t) (°C / W)
THERMAL TRANSIENT RESISTANCE
0.003 -
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600V
10 = 500A
VGE = i 15V
Tc = 25°C
.3 0.5 l 3 5 10 30
GATE RESISTANCE RG (Q)
trr, Irr - IF
COMMON CATHODE
di/dt=300A/ps
VGE= - 10V
Tc=25°C
100 200 300 400 500
FORWARD CURRENT IF (A)
Rth(t) - tw
Te = 25°C
DIODE STAGE
TRANSISTOR STAGE
0 3 10-2 IO-l 1 10
PULSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA
MG500Q1US1
10 (A)
COLLECTOR CURRENT
SAFE OPERATING AREA
- l I I Hllll I [
IC MAX.(PULSED) X
1000 = _ .
\ N _ 50/es X
600 's,x,
300 l N
IC MAX. l N \
100 (CONTINUOU ) _ 'I k
50 i 'r,,lll,l,l/rl, l \
:DC OPERATIONS. \ .
30 l 11111111 1\ VOst
.)k. SINGLE I. N
10 NONREPETITIVE lms M.
PULSE Tc=25°C
5 CURVES MUST BE
3 DERATED LINEARLY
WITH INCREASE IN
1 TEMPERATURE. ,
1 3 10 30 100 300 1000 3000
COLLECTOR- EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
REVERSE BIAS SOA
Tis 125°C
VGE = i 15V
Rg=2.40
0 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5

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