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MG30G6EL2
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
TO s H I BA TECHNICAL
SEMICONDUCTOR
TOSHIBA CTR MODULE
MGBOGGELZ
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH POWER SHITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
FEATURES:
. The Collector " Isolation from Case.
. 6 Power Transistors and 6 Free wheeling
Diodgs are Built Into 1 Package.
. digh DC Current Gain t hFE=100(Min.) (Ic-SOA)
. Low Saturation Voltage
t vcEotsty'''2.ov04ax.)
. High Speed t tf-3us(Max.)
EQUIVALENT CIRCUIT
Unit In an
(IC=3OA)
‘(Ic33OA)
V E25 - L0
‘ :54. mu:
" N-TAB
6-r -TAB 250
L, -..iliWA.t.1 '33 42tos
JEDEC -
EIAJ -
TOSHIBA 2-72A2A
Weight t 240g
BU o-----) BV BW o-HCL
--< -t 7
A', '" U I '
EV cr-
l BY o---?
M "pp.
--232 -
EGA-iftg3006EL2-1
TOSHIBA CDRFOHA‘I’IDN
SEMICONDUCTOR
TECHNICAL DATA
TOSHIBA
MGBOGGELZ
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 600 ll
Collector-Emitter Sustaining Voltage VCEX(SUS) 600 ll
. cho
450
Emlt:ter-Base Voltage VEBO 6 V
Collector Current DC Ic 30 A
lms Icp 60
Forward Current DC IF 30 A
lms IFM 60
Base Current In 2 A
Collector Power Dissipation (Tc-25°C) PC 200
Junction Temperature T3 150 °C
Storage Temperature Range Tstg ...40-125 "c
Isolation Voltage V1501 2500 (AC 1 Minute) ll
Screw Torque 30 kg-cm
~ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO Vc3=600V, 13:0 - - 1.0 mA
Emitter Cut-off Current IBBO VEB=6V, Ic=0 - - 200 mA
Co11eetor-Emitter " " .
Sustaining Voltage vCEO(SUS) IC 0.5A, L GOmH 450 ll
DC Current Gain ttre VCg-SV, Ic-30A 100 - -
Collector-Emitter
VCE(sat) - - 2.0 ll
Saturation Voltage Ic=30A, 13=0.6A
Base-Emitter
Saturation Volta e VBE(sat) . - - 2.5 ll
Tunr-on Time ton tmpg INPUT 00TPOT - - 1.0
Switching Time Storage Time tstg o TBS? H - - 12 us
Vcc=3mv
Fall Time tt 131:06A' IBZ='°6A - - 3.0
DUTY CYCLE=O5 i
Forward Voltage IY IFB3OA, IB=0 - - 1.6 ll
I =30A ll =-2V
Reverse Recovery Time ter F , BE - - 0.7 us
di/dt-GOA/us
Thermal Resistance Rthtr-ey Transistor - - O.625 ''trN
Diode - - 1.8
EGA-ttMoaiEL2-2
- 233 t-.. TcaHIaA CORPORATION
TOSHIBA
SEMICONDUCTOR
. TECHNICAL DATA
MG3OG6EL2
TIA'JQ)
COLLECTOR—EMITTER VOLTAGE VCE (V) COLLECTOR CUMENT 13 (A)
COLLEc'ron-wm'rm VOLTAGE vcgw)
[B=uosA
COMMON EMITTER
Tc = 25C
1 2 G l 5 6 T
C0LLEtJT0R-F.'MWrkR VOLTAGE Veg (V)
"Iron-- IB
COMMON EMITTER
To = 25‘C
Ic=10A
so 100 goo 1009
BASE CURRENT 13 (mA)
VCE - 13
COMMON EMITT BR
Te = -40'C
I = 10A
GO 100 3(1) 1000
BASE CURRENT IB (ITIA)
- .-234-.
COLLECTOE-EMITTER VOLTAGE VCE (V)
‘DC cunazu": GAIN hm
COLLECTOR CURRENT Ic (A)
hFE - 10
COMMON EMITTER
V03: 5 V
05 1 a 10 GO 100
COLLECTOR CURRENT Ito (A)
VCE - IB
COMMON EMITTER
Te = 125'C
Ic=10A
so 103 500 1000
BASE CURRENT 13 (mA)
lo - VBE(eat)
COMMON EMITTER
15:06 A
G 4 08 1.2 1.6 2.0 2.4
BASE-EMIT’I‘ER SATURATION VOLTAGE
VBE(sat) (V)
EGA-MG3OGGEL2-3
TOSHIBA CORPORATION
SEMICONDUCTOR
TOSHIBA
TECHNICAL DATA
MG30G6EL2
swn'cnmo 2mm (”8) FORWARD cm: 11. (A)
coLme'ron cam“ 10 (A)
comma GATHODE f '
20 Pit,' r
0 04. 08 1.2 L6 2.0 "
FORWARD VOLTAGE v, (v)
SWITCHING TIME - 132
COMMON EMITTER
60 Tc=25t
VCG=SOOV
GO 131:0”
lo -0.4. ‘08 -1.2 -1.6 '20 -at -2.8 ‘32
men oumzm 192 (A)
REVERSE BIAS S OA
60 Ta $1251:
Ima'-- 'LZA
M VBE= -6y
oo1oomossoosaosmsoovoosx,
.00LLWJToRlMIT'N1R vomnom ch (v)
mrcnmo nun: (no)
common 0mm Ic (A)
TRANSIENT THERMAL RESISTANCE
ntth) ('C/W)
SWITCHING TIME - Io
COMMON EHITTER
VCO=GOOV
TBI-- '152=OGA
Tc =3 " t;
o . a IR 16 20 " 28 32
COLLECTOR CURRENT Ic (A)
SAFE OPERATING AREA
I SINGLE NONREPETITIVE PULSE}
Te 2 M ‘C
CURVES MUST BE DEMTED LINEARLY
1 WITH INCREASE IN Tmmwm
MAX, PULSED) P,
50 10 MAX. o,
(CONTINUOUS) '
2 5 10 so so 100 300500 1000
CoLLEtyrtm-BMPrTgltt VOLTAGE V” (v)
. Rth(t) - tw
B DIODE sum:
us TRANSISTOR sum:
ao 0 0 03 1 G
PULSE wnmx t. (a)
EGA-tfG30C6EL2-4 *
1986-4-t0
TOSHIBA CORPORATION
www.ic-phoenix.com
.
