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MG300Q2YS40
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG300Q2YS40
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
hhlGi300Q2YS40
HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
0 High Input Impedance EQUIVALENT CIRCUIT
0 High Speed .' tf=0.5ps(Max.) C1 E1 E2
trr = 0.5ps (Max.)
0 Low Saturation Voltage : VCE(sat)=4.OV(MaX.) C1 E2
0 Enhancement-Mode
0 The Electrodes are Isolated from Case.
G1 EI/C2 G2
0 Outline : TOSHIBA 2-109D2A (B1) (B2)
(See page 3 for the device outline)
0 Weight : 550g (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES uF20 V
Collector Current DC C A
lms ICP 600
Forward Current DC F A
lms IFM 600
Collector Power Dissipation (Tc=25°C) PC 1800 W
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -40--125 T
Isolation Voltage VIsol 2500 (AC 1 minute) V
Screw Torque (Terminal/ Mounting) - 3/ 3 N . m
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/6
TOSHIBA MG300Q2YS40
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i20V, VCE =0 - - i30 PA
Collector Cut-off Current ICES VCE=1200V, VGE=0 - - 3.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) IC=3OOmA, VCE=5V 3.0 - 6.0
Collector-Emitter Saturation
= = - . 4.
Voltage VCE(sat) IC 300A, VGE 15V 3 0 0
Input Capacitance Cies VCE = 10V, VGE =0, f = lMHz - 36000 - pF
Rise Time tr 15V - 0.3 0.6
Turn-on Tim t "d 2.7n - 0.4 0.8
Switching Time e on 0 N ps
Fall Time tf -15V - 0.2 0.5
Turn-off Time toff 600V - 0.8 1.5
Forward Voltage VI? IF=300A, VGE=0 - 2.0 3.0 V
. IF = 300A,VGE = - 10V
- .2 .
Reverse Recovery Time tn. di / dt= 3 00 A HAS 0 5 O 5 ,us
T a si tor - - 0.069
Thermal Resistance Rth(j-c) r n ls "C/W
Diode - - 0.25
1997-03-03 2/6
TOSHIBA
MG300Q2YS40
OUTLINE : TOSHIBA 2-109D2A Unit in mm
108ic0.6
93t0.3 l 4 -36.5dr0.3
14 80f0.6 I (
7-h2 Cih, r r " , #231 't
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Cd L i J N, (<9 i
Std) l I )1»ij i
2.5+0.3 2.0j:0.3 , 3.5103 \
I 5-FAST-ON-TAB #110
28dr0.6 @399" 2 9.25:1.2 "c', 5-M6
7i0.3 9i0.3
20.5:o.6 I18.75nto.§ 8.75i0.6|
F 'T I 31 - 66:0.6
25:03 2l0.3 2w; 3.5r0.3 t r" ---1'-'"'"'"------1
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mg N3 “311 I ”3 9‘4 I m, .
"cl, 'J,, Ti' in. , , $1; 335.
m ' to, f?, N N M tCi,'
N N tl N";
N td N
Weight : 550g (Typ.)
1997-03-03 3/6
TOSHIBA
MG300Q2YS40
COLLECTOR CURRENT 10 (A)
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR—EMITTER VOLTAGE VCE (V)
IC - VCE
COMMON
EMITTER
To = 25'C
2 4 6 8 10
COLLECTOR'EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = - 40°C
IC=600A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Tc = 125°C
IC=600A
4 8 12 16 20
GATEYEMITTER VOLTAGE VGE (V)
COLLECTOREMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT [C (A)
IC - VCE
COMMON
EMITTER
Te = 125°C
2 4 6 8 10
C0LLECT0WEMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25'C
IC=600A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
10 - VGE
COMMON
EMITTER
VCE=5V
4 8 12 16
GATE-EMITTER VOLTAGE VGE (V)
1997-03-03 4/6
TOSHIBA MG300Q2YS40
VCE,VGE - QG SWITCHING TIME - IC
S" 1000
if, g m
d 600 < E
' a E1
E 400 E g
ii COMMON E e, COMMON
g EMITTER E t EMITTER
F 200 - s': VCC=600V
B RL--2n 2 Tc=25°C VGE=i15V
g Tc=25°C © - - 125.0 RG=2.7n
o 0 600 1200 1800 2400 3000 3600 0 50 100 150 200 250 300
CHARGE QG (nC) COLLECTOR CURRENT 1C (A)
SWITCHING TIME - RG IF - VF
COMMON Tc-- 25°C COMMON
EMITTER 125°C CATHODE
VCC=600V k" VGE=OV
A IC=300A V
3 V = *15V toff E Tc=125°C
P 'ii'
s'-,-:',, B
1 3 5 10 30 50 100 300 o 0.5 1 1.5 2 2.5 3 3.5
GATE RESISTANCE RG (n) FORWARD VOLTAGE VF (V)
k" trr, Irr - IF C - VCE
v 100000
Gi' 30000
'le' v ti. 10000
: U 3000
td 'j] M
E E: ji 1000
o Fw <
o M E:
g M o 300
M S g COMMON EMITTER
go COMMON g 100 V =0
g E CATHODE GE
M H Tc-- 25''C di/dt=300A/ps f=1MHZ
r: , To: 125°C
M m - - - 125°C VGE= -10V
< > 10
ti E 0 50 100 150 200 250 300 350 0.03 0.1 0.3 1 3 10 30 100
FORWARD CURRENT Ip (A) C0LLECT0R-EMITTER VOLTAGE VCE (V)
1997-03-03 5/6
TOSHIBA MG300Q2YS40
Rthm - tw SAFE OPERATIHG AREA
1 1000 111111111 1 lllll
M :C MAX.(PULSE)y1 l l Ill
g Tc=25°c k" 500 1 1 lllllll 1 \ \ 50ps ik.
< 0.3 DIODE STAGE v 30010 MAX.(CONTINUOUS)) \ ll
[ji, J.? tt l I ll \ 100ss x -
m lms X l
g A 0.1 E. \ \ N
a t ti 100 . ' k
z p E . h l h
a v 0 03 TRANSISTER STAGE (D IK. SINGLE h ,
, a' . 0 50 NONREPETITIVE \
g .g o: 30 PULSE l
F“ 0.01 F, Tc=25"C \ \
:l g CURVE MUST l l
2 :3 10 BE DERATED l
M O LINEARLY WITH
M 0.003
= O INCREASE IN t, f, f)PEHTP,N,
F TEMPERATURE. hlllll 1 l ll ,
0.001 Nllll J I ll
10" IO" IO" 1 10 1 3 10 30 100 300 1000 3000
PULSE WIDTH tw (s) C0LLECT0WEMITTER VOLTAGE VCE (V)
REVERSE BIAS SOA
fi 300
5 1 . a
8 0.5 Tjccr126''C
0.3 VGE=i15V
Rg=2.7n
0 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 6/6
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